本論文之主要目的在於探討氮化鎵化合物成長於矽(111)基板時的影響因素，並且運用了許多方法去更一步的提升氮化鎵的品質。因此，我們成功的使用有機金屬化學氣相沉積法成長高品質氮化鎵於矽基板上並製作出光檢測器。
首先，我們探討高溫氮化鋁緩衝層的影響，藉由改變TMAl預沉積時間、氮化鋁的成長溫度、成長厚度、五族氮與三族鋁的比例以及氮化鋁的成長速率，我們期望可以得到最佳的結晶品質以及光學特性。在此，我們利用高解析X光射線繞射儀、光致發光量測系統及原子力顯微鏡等量測設備分析成長材料的品質，透過實驗進行品質改善，我們成功的成長高品質氮化鎵於矽基板上。
之後，我們增加氮化鎵磊晶成長的厚度，以期望得到更好特性，但是磊晶層產生裂痕的問題便隨之而來。為了解決這個問題，我們使用氮化鋁鎵及低溫氮化鋁插入層。從實驗中，我們獲知線性漸變的氮化鋁層以及720°C的低溫氮化鋁層可以有效的提升結晶品質也可以減少產生裂痕的密度。
最後，我們使用氮化鎵/氮化鋁鎵超晶格結構來獲得更佳且沒產生裂痕的結晶品質。超晶格的對數為20對，氮化鎵層及氮化鋁鎵層的成長時間分別為10秒與5秒。在如此的成長條件下，我們得到最佳的結晶品質且氮化鎵薄膜沒有產生裂痕，且從穿透式電子顯微鏡觀察得知超晶格結構可以有效的侷限晶格差排的問題以及補償成長時的應力。
之後使用此最佳品質的氮化鎵薄膜來製作光檢測器。從量測結果中，此元件有著很小的暗電流，僅3.01*10-11安培，且此元件的光暗電流比以及紫外光對可見光的比值在10伏特時分別為9.42*104及1420。此結果顯示我們的元件擁有非常良好的特性。
在此論文中，我們已經成功的成長高品質的氮化鎵於矽(111)基板上，之後我們將測試參雜濃度以期望製作出高亮度及低順向偏壓的垂直式發光二極體。此外，為了解決極化場所造成的問題，我們將成長半極性氮化鎵於矽(113)基板上。

In this thesis, the main purpose is to investigate the factors that inference the quality of GaN grown on Si (111) substrate. And we use many methods to improve the quality. Consequently, the growth of high quality GaN on Si and fabrication of GaN-based photodiodes are demonstrated successfully by metalorganic chemical vapor deposition (MOCVD).
First, we investigated the effects of high temperature AlN (HT-AlN) buffer layer. The epitaxial parameters such as pre-deposition time of TMAl, growth temperature, thickness, N/Al ratio and AlN growth rate were varied in order to get better crystal and optical quality. We found that proper growth conditions could enhance the quality form XRD, PL and AFM measurements. Through experiments, we successfully grew the high quality GaN on Si.
We increased the thickness of GaN to get a better property. But encounter the series crack problem simultaneously. For the purpose of solving the crack problem, we inserted AlGaN and low temperature AlN (LT-AlN) interlayers. We found that with linear-graded AlGaN interlayer and 720°C LT-AlN interlayer can not only effectively enhance the quality but also reduce the crack density.
Final, we inserted the GaN/AlGaN superlattice structure to get a higher GaN quality without crack. The number of pairs of superlattice is 20 pairs. With growth time of GaN and Al0.3GaN0.7 are 10 s and 5 s, respectively. Under these growth conditions, we got the bestquality and crack free GaN film from XRD, PL, AFM and SEM measurements. And from TEM image, we found that superlattice structure can not only block the dislocations but also balance the strain.
We also use this GaN bulk with a best quality to fabricate the photodiodes. The dark current of this PD was small as 3.01*10-11 A. We also found that photo to dark current ratio and UV / visible rejection ratio @ 10V are about 9.42*104 and 1420, respectively. These results reveal that we have fabricated high performance device.
In this study, we have successfully grown high quality GaN bulk on Si (111) substrate. Next, we will adjust the doping concentration to fabricate GaN based vertical LED/LDs with high brightness and low forward voltage in near future. Besides, in order to solve the problem caused by strong piezoelectric and/or spontaneous polarization fields, we will grow semi-polar GaN on Si (113) substrate in near future.

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