本研究以熔融淬冷法製備 Li-B-Si-Ca-Mn 玻璃(LBSCM)，分別添加 1、2、5wt%LBSCM 至(Ca,Sr)(Zr,Ti)O3(CSZT)介電材料中作為燒結助劑，經球磨混合後在99%N2+1%H2 還原氣氛下進行燒結，並輔以X 光粉末繞射儀(XRD)、掃描式電子顯微鏡(SEM)、熱膨脹分析儀(DIL)、LCR 阻抗分析儀與電化學阻抗分析，研究Li-B-Si-Ca-Mn 玻璃對 CSZT 燒結後的緻密性、微結構與介電性質的影響。
研究結果顯示在添加 5wt%Li-B-Si-Ca-Mn 玻璃時，CSZT 可於 975℃燒結緻密。由XRD 分析發現此玻璃中的Li+離子可取代CSZT 結構中的Zr4+或是Ti4+，造成CSZT晶格膨脹並產生二次相CaZr4O9，同時隨著Li-B-Si-Ca-Mn 玻璃含量提升，CSZT 介電常數與損耗隨之下降，其中低頻下的介電常數與損耗明顯降低，這是由於 Li+離子的摻雜造成缺陷對Li′Zr′′ − VO∙∙生成，產生束縛氧空缺的效果，並抑制了電子的長程傳導，使空間電荷極化效應減弱，同時隨著燒結溫度提升，晶粒尺寸增加會導致晶界密度下降，使介電常數與損耗也隨之降低。透過分析不同溫度下的的介電損耗發現，添加2wt%與 5wt%Li-B-Si-Ca-Mn 玻璃的 CSZT 在 300℃~400℃有弛豫峰的出現，經計算其活化能為1.17eV，對應為缺陷對中之氧空缺解離並遷移所致，而高溫區(>400℃)的介電損耗隨著Li-B-Si-Ca-Mn 玻璃含量提升而下降，應為缺陷對濃度上升，造成高溫下氧空缺自缺陷對中解離較慢所致。
透過交流阻抗分析探討 CSZT 中晶粒、晶界與二次相對其高溫(＞400℃)導電性質之影響，發現CSZT 晶界電阻高於晶粒，且晶界導電率隨Li-B-Si-Ca-Mn 玻璃含量提升而增加，原因為晶界缺陷對濃度較高，其需在高溫下才能解離所致。計算晶界導電活化能其值介於1.33eV～1.49eV，高於典型氧空缺遷移的活化能，推測原因為其包含缺陷對解離所需的能量；不同於晶界，晶粒導電活化能介於0.53eV～1.09eV，且其導電率在 Li-B-Si-Ca-Mn 玻璃含量自 1wt%提升至 2wt%時呈現上升趨勢，並在 5wt%添加量時下降至三者中最低，此時對應的導電活化能約為0.53eV，根據前人研究，推測為 5wt%玻璃添加量會於 CSZT 中生成最多的 CaZr4O9 二次相，導致晶粒發生氧空缺有序化，因而使晶粒導電無法有效透過氧空缺遷移進行，只能藉由電子在氧空缺間的短程傳導發生，因此對應較低的導電率與導電活化能。
將添加5wt% LBSCM 玻璃的CSZT 實際製作成使用銅內電極，尺寸0805 的積層陶瓷電容器，於 1MHz 下的容值≒140～150pF，損耗≒0.19%，崩潰電壓≒1050V，絕緣電阻≒1011Ω，仍有待改良其特性，推測原因為元件尚未達最大緻密化所致。

In this study, Li-B-Si-Ca-Mn glass was prepared by the melting quenching method, which can be used as a sintering aid for (Ca,Sr)(Zr,Ti)O3 dielectric material(CSZT). It was found that when 5wt% Li-B-Si-Ca-Mn glass was added, CSZT could be sintered at 975°C and reached a linear shrinkage of about 18%. XRD pattern indicated that the diffraction peaks of CSZT shifted toward a lower angle as the glass addition increased, which may be due to the substitution of Li+ for Zr4+ in the structure, resulting in the formation of secondary phase CaZr4O9. The dielectric constant and loss at low frequency were suppressed due to the formation of defect pairs, Li′Zr′′−VO∙∙ . The dielectric properties measured at different frequencies and temperatures revealed that the defect pair could effectively hinder mobile oxygen vacancy, lower the dielectric loss at high temperatures. Through the ac impedance analysis, the relationships among glass addition, grain conductivity, and grain boundary conductivity were evaluated. The obtained conductivity activation energy of grain boundary was between 1.39eV～1.49eV, which could be attributed to the dissociation of Li′Zr′′− VO∙∙ at a high-temperature range. The grain conductivity activation energy was about 1eV when glass content is 1wt% and 2wt%； however, the value would drop to 0.53eV as glass content reached 5wt%. The decrease of grain conductivity and activation energy may be attributed to the formation of CaZr4O9, which caused the ordering of oxygen vacancy in the grain region.

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