本研究所探討的主題為在低溫環境下利用二氧化碳雷射輔助電漿增強式化學氣相沉積系統製作高品質的n+型微晶矽薄膜，利用矽薄膜反應氣體矽甲烷(SiH4)對於波長10.6 um的二氧化碳雷射有相當高的吸收率，在薄膜沉積的過程中加入此雷射輔助，可使矽薄膜的由非晶結構轉變為微結晶結構。
在應用方面，本實驗將利用此高品質的n+型微晶矽薄膜製作非晶矽/非晶矽鍺串疊型太陽能電池之穿隧復合接面層，並期望利用此微晶結構之高載子濃度、高載子移動率、低電阻率及低光學能隙等特性，能使頂部電池與底部電池接面層的傳輸能力獲得改善，使整體串疊型電池元件效能有所提升。利用二氧化碳雷射輔助電漿增強式化學氣相沉積系統所製作的n+型微晶矽薄膜穿隧復合接面層，可以使串疊型太陽能電池元件效率由6.40%大幅提升至8.07%，並且使填充因子由0.54提升至0.59。

The topic of this research is n+ microcrystalline silicon film deposited at low temperature based on Laser-assisted Plasma-Enhanced Chemical Vapor Deposition system (LAPECVD). Since silane shows extremely high absorption coefficient to CO2 laser at certain wavelength (10.6 um), the CO2 laser beam is applied to the chamber during deposition of silicon film. It makes amorphous silicon be converted into a microcrystalline phase.
In application, this research applies the high quality n+ microcrystalline silicon film to the tunnel recombination junction of the tandem solar cell consisting of an amorphous silicon top cell and an amorphous silicon-germanium bottom cell, which expects to improve a whole cell performance by better transmission capability of both top and bottom cell due to the high carrier concentration, high carrier mobility, low resistivity and low optical gap in microcrystalline film. The tunnel junction produced by Laser-assisted Plasma-Enhanced Chemical Vapor Deposition system (LAPECVD) significantly enhances efficiency of tandem solar cell from 6.40% to 8.07%, and increases the fill factor from 0.54 to 0.59.

第一章
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