本研究是以共濺鍍的方式在背電極上方先濺鍍形成一層薄的鉬鋁金屬層(Molybdenum Aluminum layer)，再利用簡易的高溫爐加熱進行硒化，透過熱擴散的原理其鋁原子會擴散進入銅銦層此先驅層，而與其鍵結形成二硒化銅銦鋁（CuInAlSe2 , CIAS）的主吸收層，且二硒化銅銦鋁吸收層的能隙將可被調整為雙邊漸變之能隙，以此雙邊漸變能隙之製程方式將大大減少以往製程之繁瑣度及時間成本。
在此實驗樣品上的鉬鋁金屬層其鋁原子的掺雜濃度分別為5%、10%、15%，而二硒化銅銦鋁吸收層的表面其Al/(In+Al)分別為0.208、0.212及0.222，而對應的二硒化銅銦鋁吸收層表面能隙分別為1.25 eV、1.26 eV及1.273 eV，綜合此製程之優點為下列幾點：降低背電極之阻值、改善鉬金屬層與基板間的附著度、利用雙邊漸變能隙增加表面電場強度進而可改善少數載子收集率、可利用擴散形成二硒化銅銦鋁吸收層。

In this thesis, doped 5、10、15 at.% Al into the Mo back contact to provide Al source to form CuInAlSe2 (CIAS) absorber with self-formed double graded band gap are studied. The double Al grading are self-forming and require no process tweaking or modification. The Al/(In+Al) ratio of the surface of the CIAS films are 0.208、0.212、0.222, respectively. The surface band gap of the CIAS films are 1.25 eV、1.26 eV、1.273 eV, respectively. The benefits of doping Al into Mo film are: reduced back contact resistance, improved Mo to glass adhesion, increased surface electric field (improved minority carrier collection) from graded Al content (graded band gap), and supply Al to form CIAS absorber layer.

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