本研究目的在於使用有機混無機結晶材料之鈣鈦礦，混合鹵素”溴”，形成鹵化物溶液塗佈在基板上作為發光層，而在電洞傳輸層選擇以濺鍍與調配溶液兩種方法製備p-NiOx，而調配NiOx在溶解狀態下以不同溫度(Room temperature,100。C, 150。C) 加熱，形成良好的NiOx溶液，再利用熱退火處理，以提高電洞濃度作為有機混無機之鈣鈦礦發光二極體之電洞傳輸層，而NiOx作為電極中間層對於空穴的傳輸具有合適的能級，並且能阻止鈣鈦礦層中的電子傳遞到達電極，從而增加發射層中復合的概率。為了更了解氧化鎳薄膜(一)表面粗糙度(二)霍爾量測電洞濃度的變化(三)鎳缺陷含量，將會在此篇中進行探討。其中，調配溶液的氧化鎳在退火後電洞濃度在 5.33×1017 cm-3，而在調配氧化鎳溶液時以150。C加熱溶解在經過退火後氧化鎳濃度更加升高至1.52×1019 cm-3.這歸因於氧化鎳(111)之晶向更強，也就是非化學劑量組成增加，且部分二價鎳離子轉換成三價，所以鎳空缺增加造成電洞濃度提升. 而最佳化之p型氧化鎳電洞傳輸層用於高亮度甲基氨基溴化鉛鈣鈦礦發光二極體時，擁有最低導通電壓2V，且亮度高達116,295 cd/m2 而電流效率也達到5.7cd/A.

The purpose of this study is mixing the bromine with an organic / inorganic crystalline perovskite material to form a halide solution on a substrate as a light-emitting layer. The p-NiOx is the hole transporting layer in perovskite which is prepared by two methods sputtering and deployment. And the NiOx solution is prepared by heating process at different temperatures (Room temperature, 100°C, 150°C). Thermal treatment is used to improve the hole concentration for the NiOx solution. The NiOx electrode interlayer exhibits a suitable energy level for the transport of holes, and also blocks the transport of the electrons in perovskite layer from reaching the electrodes to increase the probabilities of the recombination in the emissive layer. To further understand the mechanism of p-type nickel oxide thin film, this work discusses a lot of characteristic including roughness, hole concentration and nickel vacancies. In particular, the NiOx has the hole concentration of 5.33x1012 cm3 by solution-processed and annealing. After thermal-treated solution and annealing, the hole concentration gets to 1.52×1019 cm-3. This increase resulted from the orientation of NiOx (111) stronger and the Ni+2 ions became Ni+3 ions. Thus, the nickel vacancies get more than before. The bright light-emitting diodes based on MAPbBr3 perovskite with optimized p-NiOx hole transporting layer has turn-on voltage at 2 V. After heating at 150°C, the device has maximum luminance at 116,295 cd/m2 while biased at 7.9 V and the current efficiency at 5.7 cd/A.

Chapter 1
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