本論文的主要目標為應用奈米結構來發展高效率的氮化鎵與磷化鋁鎵銦系列發光二極體。於應用奈米結構改善氮化鎵發光二極體之研究中，首先利用電漿處理改善氮化鎵發光二極體的結構輸出功率，希望藉由改善電流分佈，以獲得良好的光電特性。將利用電流阻障層改善發光二極體發光效率之概念，運用於本文，首先運用最佳條件在p型金屬接墊底下做近似絕緣的電漿處理，以期望達成杜絕p型電極注入電流向接墊下方流通之現象，因為接墊下方所發出的光源，容易被接墊遮蔽或反射後被材料本身所吸收，進而造成光輸出的損失，所以接墊下方電流的減少將使發光二極體獲得更高的輸出功率，在20毫安培電流注入下光輸出功率可得到13%的提升。第二部分 進一步探討粗糙化圖型與蝕刻的深寬比大小對氮化鎵發光二極體光電特性的影響。我們成功地證明了具有奈米圖案的氮化鎵發光二極管使用金屬光罩轉印及利用感應式耦合電漿處理 p-type GaN 薄膜表面並應用在氮化鎵發光二極體上，針對感應式耦合電漿的 ICP 功率、處理時間、Cl2/N2氣體流量的變化及通入N2處理對電特性及發光效率的影響加以探討。將應用簡單、低成本奈米等級金屬光罩轉印於氮化鎵發光二極體製作表面圖案式結構，探討400-nm、3-μm和傳統的發光二極體的亮度效率差異，我們亦發現在 20 mA 時輸出功率分別為5.16 mW,4.59mW and 4.28 mW。
針對氧化鋅鋁Al-doped ZnO (AZO)透明導電薄膜，應用於磷化鋁鎵銦發光二極體上之光電特性研究，並與不同的透明導電薄膜(氧化銦錫；ITO)作比較。先經由探討透明導電薄膜對於P 型磷化鎵之歐姆接觸特性，並將最佳化之結果應用於磷化鋁鎵銦發光二極體之製程上。由於氧化鋅鋁薄膜直接成長在P 型磷化鎵上，無法得到良好的歐姆接觸。但藉由在磷化鎵窗口層表面直接沉積金鈹擴散薄層來形成直接歐姆接觸，在經過最佳之熱處理製程後，可有效改善其接觸特性，可以進一步將低特徵接觸電阻值為2.68×10−4 to 1.52×10−4在發光二極體元件方面，以AZO和ITO透明導電薄膜作為電流擴散層(Current Spreading Layer)應用於表面粗化後之磷化鋁鎵銦發光二極體，在注入電流為20mA 時，其光輸出功率為7.01mW和6.6mW，最大光功率有著49.6%提升，應用於發光二極體上，AZO在具有磷化鎵接觸層之磷化鋁鎵銦發光二極體表現出極佳的電性及穩定性。
藉由連續性離子層吸附與反應法製備方法，我們製作出奈米柱氧化鋅於磷化鋁鎵銦發光二極體上，然而再使用氧化鋅奈米柱當蝕刻阻擋層蝕刻磷化鎵窗口層，蝕刻後產生磷化鎵奈米柱在磷化鋁鎵銦發光二極體表面上，並量測光電特性，最大光功率有著78.34%提升。
於奈米結構來增加改善以GaN-based LEDs以及AlGaInP-LEDs光的輸出效率，第一部分,以連續性離子層吸附與反應法製備氧化鋅奈米粒子是透過低溫95度和常壓的環境下製備，並使用連續性離子層吸附與反應法制被氧化鋅奈米粒子在含有二氧化矽的氮化鎵發光二極體表面上，以純水和乙二醇參雜比例來改變顆粒直徑與顆粒密度變化，蝕刻氮化鎵發光二極體表面上二氧化矽後，探討光電特性，在20mA電流注入下與傳統比較，輸出功率有42.7%-49.1%提升。第二部分，以連續性離子層吸附與反應法製備方法，藉由純水和乙二醇參比例，合成不同粒徑之氮化矽奈米柱的磷化鋁鎵銦發光二極體表面上，並利用掃描式電子顯微鏡 (SEM) 及粒徑分析儀觀測氮化矽尺寸及分布狀況，利用合成之氮化矽奈米柱做為遮罩並藉由乾式蝕刻方式進行發光二極體表面粗化，以達提升發光二極體出光效率之目的，於20 mA操作下，元件輸出功率有33.7%提升。

The main purpose of this dissertation is to develop high efficiencies of GaN- and AlGaInP-based light-emitting diodes (LEDs) by applying nanostructures. Research to improve the GaN light-emitting diodes in the application of nanostructures, improve the light output power of the GaN-based light emitting diodes (LED). In this paper, we used several kinds of plasma on p-GaN.We expect to let the bottom of the p-pad region nearly insulated by using the optimal plasma treatment condition. Because the light below the p-pad will be eclipsed or reflected by the thick p-pad, this result will reduce the efficiency of output power. Therefore, we could get the higher output power by reducing the current below the p-pad region. We can get 13% enhancement in light output power at 20 mA. The second part, the effect of the etching pattern and etching depended on the aspect ratio on the characteristics of the GaN-based LEDs would be discussed. We successfully demonstrated that the GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and use inductively coupled plasma (ICP) dealing with p-type GaN film surface and applying to the GaN light emitting diodes (LEDs) to discuss how ICP power, time treatment and the changing in Cl2/N2 gas rates influence plasma etching with in-situ N2 treatment on electric characteristics and light output efficiency. we investigate the use of patterned structures in the light-emitting diodes and improve the light extraction efficiency . Applied simple, low-cost, CMEL to texture p-GaN for the fabrication of GaN light-emitting diodes (LEDs) for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, We were also found that the 20 mA light output power were 4.28 mW, 4.59 mW, and 5.16 mW, respectively.
Al-doped ZnO (AZO) thin film contact to AlGaInP-based light emitting diode(LED) was investigated and compared with ITO thin film. We demonstrated a series of properties of different transparent contact layers(TCL) onto p-GaP and applied the optimization to the chip process of LEDs. In order to improve the electrical properties of AZO contact layer to p-GaP, the direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer on the surface of GaP window layer, After a best annealing treatment process, which can effectively improve the contact characteristics, The specific contact resistances could be further reduced from could be further reduced from 2.68 × 10−4 to 1.52 × 10−4Ω-cm2 Based on the above TCL conditions, AlGaInP LEDs featured with AZO, and ITO film as current spreading layer (CSL) application AlGaInP LED used in surface roughening after. With an injection current of 20 mA, these LEDs light output powers of 7.01mW and 6.6mW, the maximum output power could be enhanced 49.6% , The material of AZO shows the superior electrical properties and reliability. the AZO thin film deposited by electron-beam evaporator could be a transparent electrode application on AlGaInP-based light emitting diode.
Nanorods ZnO layers were fabricated on the top of the p-GaP window layers of AlGaInP-based LEDs by using Successive Ionic Layer Adsorption and Reaction, (SILAR) method.However GaP window layer with ZnO nanorods mask were etching by ICP process, the maximum output power could be enhanced 78.34% under 20mA current injection as compared with the standard surface LEDs.
The use nanostructures in order to increase the improvement of GaN-based LEDs and the AlGaInP-LEDs light output efficiency. The First part, the use ZnO nanorods were grown by Successive Ionic Layer Adsorption and Reaction, (SILAR) method. This experiments were carried out at low temperature 95°C and at normal pressure conditions ZnO nanorods with different diameters and densities were grown on SiO2 thin films on surface or GaN-based LEDs by controlling DI water and ethylene glycol rinsing procedures with different solvent volume ratios (water/ethylene glycol) After the SiO2 thin films on GaN-based LEDs was etching by ICP the output power variation voltage variation and wavelength spectrums of GaN-based LEDs were investigated The output power could be enhanced 42.7%–49.1% under 20-mA. The second part, the use ratio of DI water and ethylene glycol by Successive Ionic Layer Adsorption and Reaction, (SILAR) method. The sizes and the distribution of SiNx nanopillars on AlGaInP-based LEDs are observed by Scanning Electron Microscopy (SEM) and Particle Analyzer. we apply SiNx nanopillars as a hard mask to obtain patterned and roughing wafer surface by which the light extraction, the light-output power was significantly increased by a factor of 33.7% than conventional structure under 20-mA operation.

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Chapter 4:
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Chapter 5:
Reference
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Chapter 6-1:
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Chapter 6-2:
Reference
[1]K. Streubel, N. Linder, R. Wirth, and A. Jaeger, “High brightness AlGaInP light-emitting diodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, no. 2, pp. 321-332, 2002.
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