隨著半導體工業元件縮小到 90 nm以下,離子植入需要以較小的能量並且可以維持高離子電流已經變成了重要的技術問題。在任何能量下將離子打進晶片最理想的離子植入方式就是漂移模式，離子被萃取的能量也就是最後的能量。然而在低能量使用漂移模式會造大量的離子電流的流失。
目前有兩種方式可解決這個問題。一個就是減速模式，過程中離子使用較大於所需的能量來翠取出較大的離子電流，之後在到達晶片之前在減速至所需的能量。減速模式的缺點就是能量汙染，能量汙染會影響到植入的深度。另外一個方法就是分子植入(目前最常被使用的就是二氟化硼的植入)
本論文將使用碳硼烷來取代硼跟二氟化硼的離子植入。隨著不一樣的能量植入其結果將藉由以下項目來分析探討
a. 離子電流分析(Beam current)
b. 阻值分析 (RS ,RS U%)
c. SIMS 分析

由本實驗結果可知以碳硼烷離子植入相較於硼及二氟化硼，
在阻值及植入深度確實可以得到不錯的效果，但是在離子電流表現上雖然有等效10倍的效果，但實際上卻只有0.1~0.2 mA的離子電流，這樣小的離子電流很容易因為不穩定而造成植入均勻度不佳或者植入劑量上的誤差。

As the semiconductor industry scales devices beyond the 90 nm node , the need for implant energy scaling has become one of the major issues for existing high current ion implant technology.
The ideal implantation method for all energy ranges is to transport ions to the wafer in drift mode, so that all of the ions are extracted at the final energy level. However, at low energy, monomer implants in drift mode operation result in a significant loss of beam current .
There are two methods to solve this issue .one is deceleration mode implantation. In this process , ions are extracted at higher potential than the desired energy to draw higher beam currents from the ion source and are then decelerated to the desired low energy before reaching the wafer. The disadvantage of the deceleration method is energy contamination . Energy contamination will affect the depth of implantation. Another is molecule implantation(The most commonly used is BF2 implantation .).
The thesis will use Carborane implantation replace Boron and Fluoride boron implantation .As different energy of Carborane , Fluoride boron ,Boron implantation , the result will be analyzed and discussed as below:
a . Beam current analysis
b . RS analysis
c . SIMS analysis
According to the result , Carborane implantation can get good RS and shallow depth . Carborane implantation can get one-tenth equivalent
energy , but Carborane beam current is only 0.1~0.2 mA . Low beam current is unstable and causes bad RS U% or dose error easily.

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