本研究藉由新型雷射輔助電漿增強式化學氣相沉積系統，可在低溫環境下沉積矽化鍺薄膜並製作近紅外光檢測器。由於矽化鍺薄膜的反應氣體矽甲烷與鍺甲烷在二氧化碳雷射(10.6 μm)的波長下擁有高吸收率，在同時受電漿與二氧化碳雷射作用下，使得反應氣體能更容易且有效率地解離為矽與鍺原子。利用低掠角X光繞射移與高解析度穿透式電子顯微鏡量測可發現加入雷射輔助之矽化鍺薄膜有產生明顯地微結晶訊號。經由傅立葉轉換紅外線光譜儀的估算下，雷射輔助矽化鍺薄膜有較低的Si-H與Ge-H鍵結分別為5.72×1021 cm-3與6.06×1020 cm-3。為進一步探討雷射輔助矽化鍺薄膜的功用，因此利用有無雷射輔助的矽化鍺薄膜製作結構為p-Si-i-SiGe-n-Si的近紅外光檢測器作比較，而量測結果加入雷射輔助之矽化鍺薄膜，其光檢測器的量子效率可由無雷射輔助51.7%提升至70.4%。

In this work, the novel laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system was designed to deposite the silicon-germanium (SiGe) films at low temperature for the near infrared photodetectors. Because the SiH4 and GeH4 reactant gases of the SiGe films have a high absorption coefficient at a wavelength of CO2 laser (10.6 μm), the reactant gases could be easily and efficiently decomposed into Si and Ge atoms by the simultaneous function of the plasma and CO2 laser. Using the Grazing incidence X-ray diffraction (GIXRD) and High-resolution transmission electron microscopy (HRTEM) measurement, there was significantly produced microcrystalline signal with laser-assisted SiGe films. The lower Si-H bonds and Ge-H bonds of the laser-assisted SiGe films were 5.72×1021 cm-3 and 6.06×1020 cm-3, respectively, estimated using the Fourier transform infrared (FTIR) spectrometry. The p-Si-i-SiGe-n-Si near infrared photodetectors, which the i-SiGe film was deposited with and without laser assistance, were fabricated to investigate the function of the laser-assisted SiGe films. The quantum efficiency of 51.7% was improved to 70.4% of the photodetectors with laser-assisted SiGe films.

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