| 研究生: |
呂珈瑱 Lu, Jia-Tian |
|---|---|
| 論文名稱: |
利用絕熱地圖分析矽光子之任意絕熱參數與模態耦合 Arbitrary Adiabaticity Parameter and Coupled Mode Analysis in Silicon Photonics using Adiabaticity Map |
| 指導教授: |
曾碩彥
Tseng, Shuo-Yen |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Photonics |
| 論文出版年: | 2024 |
| 畢業學年度: | 112 |
| 語文別: | 中文 |
| 論文頁數: | 73 |
| 中文關鍵詞: | 矽光子 、氮化矽 、絕熱地圖 、光波導 、光功率 、2×2 定向耦合器 |
| 外文關鍵詞: | Integrated optics, Optical wave-guide, Silicon Nitride, Adiabaticity Map, Power |
| 相關次數: | 點閱:73 下載:0 |
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本論文將絕熱地圖(Adiabaticity Map)運用於矽光子元件設計,在1550nm的波長下,以氮化矽(Silicon Nitride)波導結構,透過更改波導參數,計算出絕熱係數以得到絕熱地圖,並依絕熱地圖選取地圖上之不同路徑,得到相應的絕熱參數分布,進而透過絕熱參數與耦合係數之間的關係,以此設計不同元件,並能以耦合模態理論進行計算並得出此元件各長度之光功率分布情形,進而與光波行進之模擬結果進行比較。
基於絕熱地圖所得出之不同路徑,對相對應之元件進行了光功率分析,並且發現在TE和TM模態下,絕熱係數於近乎0處先降反升一點對光功率所造成之影響。本篇論文發現除了在特定情況以外,利用絕熱地圖可以根據其絕熱參數分布,使用耦合模態理論得出所希望分配之絕熱參數之元件的光功率。
We present a study that the Adiabaticity Map to the design of silicon photonic components. Using a silicon nitride waveguide structure at a wavelength of 1550 nm, the corresponding adiabatic map is obtained by calculating the adiabatic coefficients. Different components are then designed by selecting various paths on the map, allowing for a rapid determination of the optical power distribution along each length of these components.
A power analysis was conducted on the components corresponding to different paths derived from the adiabatic map. It was found that in TE and TM modes, the adiabatic coefficient initially decreases and then slightly increases near zero, affecting the optical power. This paper demonstrates that, except in specific situations, the adiabatic map can be used to quickly determine the optical power of components based on the distribution of their adiabatic parameters.
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校內:2029-08-02公開