本實驗利用脈衝雷射鍍膜儀成長 IrMn3薄膜，並以XRD與AFM檢測薄膜品質與晶體結構，再將IrMn3薄膜放置於SQUID機台，量測不同溫度下的磁化率，接著將IrMn3/NiFe雙層薄膜應用於霍爾磁阻系統中，量測出磁滯曲線，並取得其距離零場的偏移量，即為交換偏壓場大小。
實驗中IrMn3薄膜採用多層膜(multilayer)的成長方式，除了成功的長出有序的結構，也希望透過精準的薄膜厚度控制，來探討其尼爾溫度，論文中也將討論IrMn3薄膜厚度對於尼爾溫度的影響。

Non-collinear antiferromagnetic materials is very popular issue recently, since its ferro-like properties such as Anomalous Hall effect, magneto-optical Kerr effect, current polarizing, etc. which is attractive for AF-based memory applications. In this thesis, we successfully fabricated IrMn3 antiferromagnetic thin films on a-plane(r-plane) sapphire substrates in our PLD system. Besides, The (100) of diffraction peaks in XRD spectra verified ordered structure of IrMn3. We would like to discuss the Neel temperature of IrMn3 by regulating thickness of IrMn3 (2.8, 4.2, 5.6 nm), especially when thickness at 2.8 nm for IrMn3, the Neel temperature of IrMn3 around room temperature (300 K). As increasing the thickness of IrMn3, the Neel temperature for IrMn3 has a tendency to rise.

1. Meiklejohn, W.H. and C.P. Bean, New magnetic anisotropy. Physical Review, 1957. 105(3): p. 904.
2. Nogués, J., et al., Exchange bias in nanostructures. Physics reports, 2005. 422(3): p. 65-117.
3. Park, B.G., et al., A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction. Nature materials, 2011. 10(5): p. 347.
4. Marti, X., et al., Room-temperature antiferromagnetic memory resistor. Nature materials, 2014. 13(4): p. 367.
5. Lee, C.-H., et al., The exchange bias of a permalloy and ordered epitaxial IrMn thin film prepared from the growth of ultrathin [Ir/Mn] multilayer. IEEE Transactions on Magnetics, 2011. 47(10): p. 3497-3500.
6. Frangou, L., et al., Enhanced spin pumping efficiency in antiferromagnetic IrMn thin films around the magnetic phase transition. Physical review letters, 2016. 116(7): p. 077203.
7. Khan, R.A., et al., Magnetic domain texture and the Dzyaloshinskii-Moriya interaction in Pt/Co/IrMn and Pt/Co/FeMn thin films with perpendicular exchange bias. Physical Review B, 2018. 98(6): p. 064413.
8. Hubler, G.K., Pulsed laser deposition. MRS Bulletin, 1992. 17(2): p. 26-29.
9. Geohegan, D., D. Chrisey, and G. Hubler, Pulsed laser deposition of thin films. Chrisey and GK Hubler (eds), Wiely, New York, 1994: p. 59-69.
10. Eason, R., Pulsed laser deposition of thin films: applications-led growth of functional materials. 2007: John Wiley & Sons.
11. 黃舜漁, 國立成功大學碩士論文. 2017.
12. 杜怡君、張毓娟、翁乙壬等九人, 磁性基本特性及磁性材料應用. 國立台灣大學化學系.
13. 胡裕民、黃榮俊, 鐵磁/反鐵磁金屬薄膜之間的交換磁異向性. 物理雙月刊廿二卷六期 (2000 年12 月).
14. Kohn, A., et al., The antiferromagnetic structures of IrMn3 and their influence on exchange-bias. Sci Rep, 2013. 3: p. 2412.
15. Feng, W., et al., Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn 3 X (X= Rh, Ir, Pt). Physical Review B, 2015. 92(14): p. 144426.
16. Železný, J., et al., Spin-polarized current in noncollinear antiferromagnets. Physical review letters, 2017. 119(18): p. 187204.
17. Chen, H., Q. Niu, and A.H. MacDonald, Anomalous Hall effect arising from noncollinear antiferromagnetism. Physical review letters, 2014. 112(1): p. 017205.
18. Wadley, P., et al., Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs. Nat Commun, 2013. 4: p. 2322.
19. Chen, H., Q. Niu, and A.H. MacDonald, Anomalous Hall effect arising from noncollinear antiferromagnetism. Phys Rev Lett, 2014. 112(1): p. 017205.
20. Meiklejohn, W.H. and C.P. Bean, New magnetic anisotropy. Physical review, 1956. 102(5): p. 1413.
21. Nogués, J. and I.K. Schuller, Exchange bias. Journal of Magnetism and Magnetic Materials, 1999. 192(2): p. 203-232.
22. Berkowitz, A. and K. Takano, Exchange anisotropy—a review. Journal of Magnetism and Magnetic materials, 1999. 200(1-3): p. 552-570.
23. Kools, J., Exchange-biased spin-valves for magnetic storage. IEEE transactions on magnetics, 1996. 32(4): p. 3165-3184.
24. 張家瑞, 國立成功大學碩士論文. 2003.
25. 曾靖富, 國立成功大學碩士論文. 2017.
26. 鄭信民、林麗娟, X光繞射應用簡介. 工業材料雜誌181期, 2002.
27. 劉芝華, 國立成功大學碩士論文. 2016.
28. 楊鴻昌, 最敏感的感測元件 SQUID 及其前瞻性應用,物理雙月刊,二十四卷五期. 2002.
29. 廖至為, 國立成功大學碩士論文. 2016.