本研究以混和靶材進行共濺鍍法製備Ga2O3-CeO2薄膜氣體感測器，藉由改變共濺鍍氣氛與不同氫氮混合氣氛(10、50、100sccm氫氣/100sccm氮氣)下蝕刻反應處理10分鐘來調控Ga2O3-CeO2薄膜的氧空缺濃度，以探討共濺鍍氣氛與氫氣處理對Ga2O3-CeO2薄膜之表面型態、晶態結構、氧空缺相對濃度變化影響。並以酒精為感測氣氛，進行感測性質的研究。
由SEM結果可知以共濺鍍法製備之Ga2O3-CeO2薄膜表面型態光滑平整，經回火處理後呈現小顆粒緻密排列；而在900℃下氫氣會與Ga2O3-CeO2薄膜產生反應，侵蝕薄膜結構。XRD分析顯示以共濺鍍法製備之Ga2O3-CeO2薄膜為非晶相排列。由光致螢光光譜分析發現以50 sccm氫氣/100 sccm氮氣之混合氣蝕刻反應處理10分鐘後，可獲得最高的氧空缺濃度，但過度的氫氣處理，反而使Ga2O3-CeO2薄膜厚度被反應消耗掉，減少氧空缺總量。根據酒精感測結果發現經過氫氣處理後，薄膜感測度提升，且可降低氣體感測器之起使操作溫度，減少感測器的能源消耗。本研究之最佳感測度出現於條件為經50sccm氫氣/100sccm氮氣之混合氣蝕刻反應處理10分鐘之薄膜中，感測度為4.49，操作溫度為575℃。

In this study, Ga2O3-CeO2 thin film gas sensors were prepared by co-sputtering method.By adjusting the working gas composition during co-sputtering and treating under various H2 concentration of H2 and N2 gas mixture (10,50,100sccm H2/100sccm N2) for 10 minutes to control the amount of oxygen vacancies in Ga2O3-CeO2 thin film.The resulting surface morphology, crystalline structure, relative concentration of oxygen vacancies, and sensing properties in response to ethanol were investigated.
The SEM results show that the Ga2O3-CeO2 thin film prepared by co-sputtering method has a smooth and flat morphology. After annealing,it has granular stacking morphology.Hydrogen reacts with Ga2O3-CeO2 thin film at 900℃,leading to an etching of thin film structure. The results of XRD analysis show that the Ga2O3-CeO2 thin film prepared by co-sputterung method is amorphous. Photoluminescence spectrum analysis shows that Ga2O3-CeO2 thin film has the highest concentration of oxygen vacancies after treating thin film with 50 sccm H2/100 sccm N2 for 10 minutes. However, an excessive hydrogen treatment will etch away the gallium oxide film to reduce the total amount of oxygen vacancies. The sensing experimental results show that the hydrogen treatment can increase the sensitivity and decrease the operating temperature of the gas sensor, reducing the energy consumption of gas sensor,and a highest sensitivity of 4.49 at 575℃ is obtained after thin film is treated with 50 sccm H2/100 sccm N2 for 10 minutes.

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