本論文針對含有摻雜半導體的半導-介電光子晶體(SDPC)作理論性的研究。在半導-介電光子晶體，介電係數和半導體內的載子密度有強相關，可以藉由摻雜的雜質的濃度來調整介電係數由正值到負值，這會造成折射系數由實數變化到複數。
在主介電-介電光子晶體裡插入一層有摻雜的半導體的缺陷，會在主光子晶體的光子能帶隙裡產生共振穿透尖峰，並且可由摻雜濃度調整尖峰位置。此外經由增加缺陷厚度，可以得到多支共振穿透尖峰，用以製造多通道濾波器。
此可調式多通道濾波器可經由其他 SDPC 結構組成，如用摻有雜質的半導體所組成的光子量子井中，可以產生比量子井層數多一的多通道濾波器；或高摻雜濃度的光子異質結構， 也可以在半導體的負介電常數區得到多通道濾波器。
溫度也被討論到如何調整共振尖峰的位置，稱為溫度調整，是利用純質半導體的載子濃度是溫度函數達成，但是同時也要加入與溫度相關的衰減係數，因為在較高溫時它會衰減穿透率。
最後在 SDPC 內加入一層超薄金屬，並討論此三層結構的MDSPC，經由增加超薄金屬厚度來擴增光子能隙的能力。

This dissertation is theoretically devoted to the studies of photonic properties in the semiconductor-dielectric photonic crystal (SDPC) containing a doped semiconductor.
In SDPC, the permittivity of semiconductor is strongly relative to the density of free carrier and can be manipulated by the concentration of impurity from positive permittivity, low impurity doping, to negative permittivity, heavy impurity doping. This leads the refractive index varies from real-value to complex-value.
With a defect of the doped semiconductor inserted in a host dielectric-dielectric photonic crystal (DDPC) as the defect layer generates resonant transmission peak, and can be tuned by varying the doping concentration inside the photonic band gap (PBG) of host PC. Additionally, by increasing the defect thickness, it is also possible to have multiple resonant peaks, leading to a multichannel filter.
The tunable multichannel filter can also be constructed by different structure of SDPC, ex, photonic quantum well (PQW) with extrinsic semiconductor as a defect layer can generate multichannel filter equal to number of defect layers plus one, photonic crystal heterostructure (PCH) and strongly extrinsic semiconductor can generate multichannel in the region where the permittivity of extrinsic semiconductor is negative.
Temperature is also discussed to tune the location of resonant peak, called the T-tuning, due to the carrier density in intrinsic semiconductor is the function of temperature but the effect of damping factor should be included as it is a function of temperature and it decays the transmittance at higher temperature.
Finally, the ternary metal-dielectric-semiconductor (MDS) PC with adding an ultrathin metal layer into dielectric-semiconductor photonic crystal (DS PC) is discussed its ability to enhance the photonic band gap (PBG) through increasing the thickness of the ultrathin metal layer.

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