本研究利用分層電化學的方式於Mo-glass基板上製備CuInSe2薄膜，使用快速熱退火進行熱處理提升薄膜的結晶性，以此薄膜製備Al / CuInSe2 / Mo-glass結構之光導體。
以循環伏安法確定Cu、In、Se三個元素分別的還原電位，抓取實驗所需要的電鍍電位，以先鍍銅、再鍍硒、接著鍍銦、最後鍍硒，這樣的電鍍順序進行實驗，並透過調變電鍍液濃度、電鍍週期，目的為製備化學劑量比接近1:1:2且表面均勻的薄膜。並以快速熱退火改善前驅膜結晶性，並透過調變溫度、硒補償的量、降溫速率、持溫時間，減少薄膜表面因熱應力產生的裂縫。
而本研究期望能將製備之薄膜應用在光導體，是以電子束爭鍍沉積鋁電極使其與N型CuInSe2為歐姆接觸，藉由調變Cu、In電鍍時間以得到所需的薄膜，且為了實驗時的穩定性，將固定電鍍時溶液的溫度，最終成功以分層電化學方式製備N型CuInSe2薄膜，其元素比例為Cu 18.71%、In 31.84%、Se 49.45%。在電性的部分，遷移率2.0679×10^2 (cm2/Vs)、電阻率7.4647×10^-5 (Ohm-cm)、載子密度4.0489×10^20 (cm-3)。
在光導體的應用，未照光時電壓為+2V時電流密度為1.45mA/cm2、-2V時電流密度-1.72mA/cm2；照光時電壓為+2V時電流密度為4.11mA/cm2、-2V時電流密度-4.49mA/cm2，光響應為5.57×10^-7(A/W)；外部量子效率為1.27×10^-4 %。

In this study, the CuInSe2 thin films was fabricated on Mo-glass substrate by layered electrodeposition and rapid thermal annealing was used to improve the crystallinity. Al contact was deposited on CuInSe2 thin films to make Al / CuInSe2 / Mo-glass structure of photoconductor.
The reduction potentials of Cu, In, and Se were determined by cyclic voltammetry. Grasp the electrodeposition potential required for the experiment, and proceed with the electrodeposition sequence of copper, selenium, indium, and selenium. Through adjusting the electrodeposition cycle to prepare with CuInSe2 element ratio close to 1:1:2 and a uniform surface.
RTA is used to improve the crystallinity of the precursor film. Through adjusting the temperature, the amount of selenium compensation, cooling rate, and holding time, the cracks on the film surface due to thermal stress are reduced.
To make Al/CuInSe2/Mo-glass structure of photoconductor, Al contact is deposited by E-beam evaporator. Making it ohmic contact with N-type CuInSe2, the Cu and In deposition time are adjusted to obtain the desired thin film for photoconductor. For the stability of the experiment, the temperature of the solution during electrodeposition was fixed. Finally, N-type CuInSe2 thin film was successfully prepared by layered electrodeposition. The element ratio was Cu 18.71%, In 31.84%, Se 49.45%. In the electrical part, the property of CuInSe2 thin film was 2.0679×10^2 (cm2/Vs) for mobility, 7.4647×10^-5 (Ohm-cm) for resistivity, and carrier concentration is 4.0489×10^20 (cm-3).
The photoconductor was measured J-V without light, the current density is 1.45mA/cm2 for +2V, and the current density is -1.72mA/cm2 for -2V; Under the light, the current density is 4.11mA/cm2 for +2V, and the current density is -4.49mA/cm2 for -2V. The photoresponsivity is 5.57×10^-7 (A/W); the external quantum efficiency is 1.27×10^-4 %.

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