本次實驗是以射頻濺鍍(Radio Frequency Sputtering)的方式在壓
力為1×10-2 torr 下成長氧化鋅薄膜，並以低溫螢光光譜分析不同退火
條件對氧化鋅薄膜之影響。在Tae-Bong Hur 等人的研究顯示(J. Appl.
Phys., Vol.94, 5787 (2003))，在空氣環境下，二次退火比一次退火更能
改善氧化鋅薄膜其由所缺陷造成的可見光螢光光譜，且UV 波段之光
譜也會比一次退火之氧化鋅薄膜來的好。因此，本次實驗的目的為研
究使用不同氣體退火，其二次退火與一次退火之氧化鋅光譜之比較。
我們發現，在空氣環境與氧氣環境(300 mtorr)下成長的氧化鋅薄膜，
其一次退火與二次退火之結果與Tae-Bong Hur 等人的研究相符，而
在氮氣環境(300 mtorr)下的結果卻是相反，一次退火的結果比二次退
火來的好。除此之外，我們也增加退火的時間(5~10 hr)以及改變二次
退火之中間溫度（500~ 800℃）對成長氧化鋅之影響，我們發現，當
退火氣體為空氣或氧氣時，其氧化鋅薄膜在中間溫度為600℃時品質
最好，但在氮氣下中間溫度的變化對氧化鋅薄膜品質並無影響。

The zinc oxide thin films were grown on p-type Si:B (100) substrates by
radio-frequency sputtering technique. The specimens were then annealed by one- and
two-step methods in air, oxygen and nitrogen gas. The annealing effect is investigated
by low temperature photoluminescence (PL) spectra. From the analysis of PL spectra,
we found that the samples annealed by two-step method in air and oxygen gas show
better structural crystallinity than that annealed by one-step method, which is the
same as reported by T.B. Hur et. al. [J. Appl. Phys., Vol.94, 5787 (2003)]. On the
contrary, the one-step annealing method is better than two-step method as annealed in
the nitrogen environment. In addition, the effects of different annealing time and the
middle annealing temperature are also studied. The best quality of ZnO thin film is
that annealed at the middle annealing temperature 600C in air and oxygen gas.
However, the middle temperature is of little influence on the quality as the sample
annealed in the nitrogen environment.

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