本論文利用MRC公司發展的電漿粒子式有限差分時域MAGIC電腦模擬程式進行奈米碳管場發射特性模擬，針對電子倍增元件及雙極式二極體結構下單根及多根奈米碳管場發射電子源進行模擬，探討奈米碳管在不同結構設計下空間電荷效應的影響。

　　在場發射電子倍增元件部份，元件入口孔徑為 160μm時，孔徑邊緣恰於發射陰極兩側閘極上方，使發射性質具有輸入低電壓而產生較高的發射電流，而在元件入口孔徑為240μm時電流倍增效果較佳。
在雙極式二極體結構部份，多根奈米碳管結構中在碳管間距越大及中間碳管越高時，使場發射電流越早趨於飽和。在單根奈米碳管結構部份，電子束溫度對於場發射特性曲線影響甚小，但對電子束發散寬度而言，空間電荷效應使得發射電流趨向飽和時，溫度較高者電子發散寬度較明顯增加。在發射電子的能量部份，陽極電壓的驅使下使空間電荷效應大到足以讓發射電流趨向於飽和狀態時，能量分佈曲線上下劇烈震盪的現象越大。

　　In this study, we simulate the field emission property for carbon nanotubes by the plasma Particle-In-Cell Finite-Difference Time-Domain method MAGIC computer simulation program of MRC Company. We discuss space charge effect and temperature effect in field emission electron source for electron-multiplier device and carbon nanotubes.

　　Part of field emission electron-multiplier structure component, when the entry aperture of the component is 160μm, the aperture edge is just above both sides of emission cathode, field emission characteristic have import low field emission initial voltage to produce higher current density. If the entry aperture of the component is 240μm, the devices have batter current amplification.

　　Part of the bipolar structure component, the field emission current tends to saturation condition by increase interval and height of carbon nanotubes bundle arrays. As to one nanotubes structure, from the result of simulation, field emission current is not influenced by electronic temperature, but if field emission current tend to saturation status by space charge effect, the high-temperature electron beam is wider than the low-temperature electron beam. As to emission electron energy, when the device has space charge effect caused by high voltage, the energy distribution plot is shake violently

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