隨著半導體科技不斷的推陳出新，鐵電薄膜材料已經被廣泛應用於現今的元件中，而其中以鐵電記憶體(FeRAM)所佔比例為大宗，因此現今被作為一種新興的揮發性記憶體。鐵電記憶體有許多優點，例如較低操作電壓、操作次數增加和讀寫速度快，不過卻無法達到量產的地步，是因為傳統鐵電薄膜材料，如鋯鈦酸鉛(PZT)或鉭酸鍶鉍(SBT)等有機材料無法整合於現今的CMOS技術上，因此近年來選用以二氧化鉿為基底的氧化鉿鋯(HZO)作為新的鐵電薄膜材料選用，其優點不僅具有高介電系數，也可使用原子層沉積系統鍍製高品質的氧化鉿鋯薄膜。
近來發現氧化鉿鋯在後段製程時相較於傳統鐵電材料來的穩定，因此常作為金屬/鐵電薄膜/金屬(MFM)結構應用於後段製程中，但因為其製程溫度要求400 oC甚至更低，因此對元件製程的熱預算(Thermal budget)掌控需求漸漸上升。有鑒於此，在本論文實驗中會利用快速熱退火、微波退火以及高壓退火與超臨界處理，對氧化鉿鋯薄膜進行不同的熱處理並且比較其特性的變化。
本論文研究總共分成三個部分：第一個部分為在矽基板上生長鐵電氧化鉿鋯薄膜，接著以不同方式進行熱處理，分別進行快速熱退火、微波退火、高壓退火以及超臨界處理，最後量測其XRD結果，可以發現當快速熱退火和微波退火的條件分別在溫度500 oC以及2400 W時開始有晶相的產生。而在高壓退火以及超臨界處理方面，原本在400 oC下進行熱處理是沒有晶相的產生，但當腔體壓力升至5 atm時，薄膜便開始有了結晶性的產生，因此我們可以增加壓力的條件，去降低整體熱處理製程的額外熱預算。
第二部分則是對金屬/鐵電薄膜/金屬(MFM)的電容結構進行熱處理後，量測其鐵電特性，可以發現當快速熱退火在300 oC、400 oC以及微波退火在2100 W時，是量測不出極化值的，這是因為沒有鐵電相的產生，而當微波退火在2700W時其極化量大小會大於快速熱退火在500 oC的大小，傳統多半是以快速熱退火對鐵電薄膜進行熱處理的，因此本實驗有加入微波退火這個新選項作為日後可以取代快速熱退火的方法。而在高壓退火以及超臨界處理方面，可以看出隨著壓力的提升，因為內部鐵電相(o-phase)的增加，使得極化量產生上升。
第三部分則是對金屬/鐵電薄膜/絕緣層/半導體(MFIS)的電容結構進行熱處理，並量測其電容-電壓(C-V)以及漏電流(I-V)曲線，在熱處理方面的參數是跟前面部分使用一樣的實驗參數，可以發現在使用超臨界處理時，其漏電流是有下降的。
分析以上的結論我們可以得知，在高壓退火以及超臨界處理過後的鐵電薄膜，不僅可以在較低溫情況下成功達到鐵電相的產生，還可以根據壓力的提升，造成內部相比例的改變，進而提升鐵電特性，而且還能使元件漏電流降低，可確認到超臨界處理在本實驗研究中帶來的優勢。
關鍵詞：氧化鉿鋯；快速熱退火；微波退火；高壓退火；超臨界處理

The research in this paper is divided into three parts: the first part is the growth of ferroelectric hafnium zirconium oxide thin films on silicon substrates, followed by thermal processing in different ways, such as rapid thermal annealing, microwave annealing, high pressure annealing and supercritical fluid treatment, and finally by measuring the XRD results. when the thremal processing is performed at 400 oC. But when the pressure rises to 5 atm The film begins to have a crystallization. We can increase the pressure conditions to reduce the extra thermal budget of the overall thermal processing.
The second part is to measure the ferroelectric properties of the metal/ferroelectric film/metal (MFM) capacitor structure after thermal processing. At the temperature of 400 oC and 200 atm, the remnant polarization (Pr) can be measured. It is 29 μC/cm2.In terms of high pressure annealing and supercritical fluid treatment. It can be seen that with the increase of pressure, the amount of polarization increases due to the increase of the internal ferroelectric phase (o-phase).The third part is to measure the capacitance structure of metal/ferroelectric film/interfacial layer/semiconductor (MFIS) after thermal processing, and measure its capacitance-voltage (C-V) and leakage current (I-V) curves. Using the same experimental parameters in the previous section. It can be found that the leakage current decreases when supercritical fluid treatment is used.
*：The author
**：The advisor
Keywords：HfxZr1-xO, rapid thermal annealing, microwave annealing, high pressure annealing, supercritical fluid treatment

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