本研究提出以磁控式濺鍍系統成長氧化鋅薄膜作為反置有機發光二極體中的電子注入層，並以該氧化鋅薄膜為晶種層，成長氧化鋅奈米柱陣列於反置結構之有機發光二極體中，藉由氧化鋅奈米柱陣列形貌減少有機主動層與氧化鋅層間的全反射增進出光，且由於氧化鋅奈米柱陣列增加有機主動層與氧化鋅層間的接觸面積，增加電子由氧化鋅注入至有機層的數量，有效改善反置有機發光二極體電子注入困難的問題，大幅提高元件的發光強度及發光效率。相較於無氧化鋅奈米柱陣列的基本反置有機發光二極體，本研究中加入氧化鋅奈米柱陣列長度為65 nm的反置有機發光二極體其最高發光強度提升至10814 cd/m2，而最大發光效率提升至1.8 cd/A。

In this work, the ZnO film was applied to inverted organic light emitting diode(IOLED) as electron injection layer using RF sputter, and the ZnO nanorod array was insertes into the IOLED to improve the efficiency of the IOLED. By inserting the ZnO nanorod array, the total reflection of the interface of the active layer and the ZnO layer will be reduced due to the morphology of ZnO nanorod array, hence it will improve the light output of the IOLED. Moreover, the ZnO nanorod array increase the contact area between the active layer and the ZnO layer, and increase the amount of injected electrons, that will ameliorate the problem that the electron injection is difficult in this IOLED, and substantial improve the luminance and the current efficiency of the IOLED. Compare to the device without ZnO nanorod array, the maximum luminance was increased to 10814 cd/m2 and the current efficiency was increased to 1.8 cd/A for the IOLED with 65-nm-long ZnO nanorod array.

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