在本研究，熱氧化法的溫度，時間以及氧氣濃度對氧化銅奈米線生長的影響在銅線表面上進行了研究。利用掃描式電子顯微鏡（SEM）拍攝氧化銅奈米線圖像的密度，直徑與長度。氧化過程中的增重在熱重量分析進行定量。在氧化銅增重數據發現，在溫度低於500 oC，銅線表面上的氧化銅奈米線生長相對緩慢，氧化速率高於此溫度時漸漸增加。SEM照片顯示，氧化銅奈米線較長在高溫，但是，奈米線的密度比較低在600 oC。另一方面，氧化時間沒有顯著影響奈米線的長度，但影響奈米線密度的分佈。使用不同的氧氣濃度奈米線的幾何形狀沒有顯著變化。熱重分析獲得銅線重量增加服從拋物線氧化速率法。阿瑞尼斯曲線能大致被分為三個區域：高溫區域（550 oC到700 oC），中溫度區（400 oC到550 oC），以及低溫度區域（325 oC到400 oC）。
氧化銅還原為銅在化學鏈燃燒應用的初步結果已獲得在本研究。在本實驗顯示化學放熱反應發生在約700 oC。這可能是化學鏈燃燒良好的條件。

In this study, the influences of temperature, duration and oxygen concentration on the growth of copper oxide nanowires on the surface of a copper wire through thermal oxidation method were studied. Scanning electron microscope (SEM) images were taken to reveal the density, diameter and length of the nanowires. The weight gain during the oxidation process were quantified with thermogravimetric analysis. It was found that nanowire growth on the copper wire surface was relatively slow for temperatures below 500 oC, and the oxidation rate increased monolithically above this threshold temperature. SEM images showed that the CuO nanowires were longer at high temperatures, however, the density of the nanowires was lower at 600 oC comparing to 400 oC and 500 oC. Oxidation duration, on the other hand, did not significantly affect the length of nanowire, but the distribution of the nanowire density. There were no significant changes on nanowires geometry using different oxygen concentration. Weight gain of Cu wire was obtained from thermogravimetric analysis and obeys parabolic oxidation rate law. The Arrhenius plots are able to be roughly classified into three regions: high temperature region (550 oC to 700 oC), intermediate temperature region (400 oC to 550 oC), and low temperature region (325 oC to 400 oC).

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