隨著積體電路元件尺寸的微縮,導致內層連線的時間延遲比整個元件的時間延遲更加嚴重,更進一步引發內層導線串音和功率消耗過高的問題,因此採用銅導線 (低阻值)及低介電常數材(低電容)來降低時間延遲(RC Delay)效應的問題。現今為了降低多層導線內絕緣體的介電常數,以導入多孔性的結構為最有效，在本研究中，將針對多孔隙薄膜之微波特性做研究與量測，其微波特性包含了相位常數、介電係數、衰減常數以正切損，在其量測過程中，我們將使用TRL 校正來做一輔助，使量測到之微波特性能更接近材料原始特性。並將量測出來之特性運用來製作一濾波器，藉由濾波器的量測結果，來驗證多孔隙薄膜的微波特性量測是否正確.

As ultra large scale integrated (ULSI) circuits shrink to sub-micron dimensions, the interconnect widths become smaller; therefore, signal propagation delays become a dominant part of the overall chip delay. cross-talk and power consumption greatly increase due to non-compatibility of the parasitic capacitance of interlayer dielectrics and the resistance of wiring metals. To solve this issue, two materials introduced into the multi-layer interconnection of the integrated circuit (IC) device. One is low dielectric material (low capacity), and the other one is copper contact line (low resistitivity).
In this thesis, we have to measure microwave characteristics of porous film which includes phase constant, dielectric constant, attenuation constant and loss tangent. During measuring process, the TRL calibration plays an assistant role to make the measurement parameters approach original material characteristics more.
After measuring the microwave characteristics, we could apply it to design a filter, proving the microwave characteristics of porous film.

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