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| 研究生： |
蔡昇峰 Tsai, Sheng-Fong |
|---|---|
| 論文名稱： |
利用熱蒸鍍法及熱碳還原法以鎳催化Ge及GeO2奈米結構的生長 Ni-catalyzed growth of Ge and GeO2 nanostructures by the thermal evaporation and carbothermal reduction methods |
| 指導教授： |
林文台
Lin, Wen-Tai |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年： | 2008 |
| 畢業學年度： | 96 |
| 語文別： | 中文 |
| 論文頁數： | 74 |
| 中文關鍵詞： | GeO2奈米線 、鎳 、Ge奈米線 、熱蒸鍍法 、熱碳還原法 |
| 外文關鍵詞： | thermal evaporation, carbothermal reduction, ni, ge nanowires, geo2 nanowires |
| 相關次數： | 點閱：82 下載：3 |
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本研究利用熱蒸鍍法將Ge粉末置於950oC加熱，在氬氣氣氛中，經由Ni催化生長Ge奈米線、Ge奈米帶以及GeO2奈米線，Ni催化生長Ge奈米線和Ge奈米帶溫度是在420~500˚C，經由VSS機制top-growth mode所生成。Ge奈米線及Ge奈米帶的生長方向，分別偏好於<110>和<112>方向，以及<112>方向，表面能在決定Ge奈米結構方向生長上扮演重要的角色。在較高溫度600~660˚C則是首先經由VSS機制生長GeO2奈米線，此項結果與之前文獻報導經由VS機制生長GeO2奈米線，並無存在金屬催化劑有所不同。經由Ni催化生長Ge奈米線的生長模式，可以與合成方法和生長溫度無關。同時，Ni催化生長Ge及GeO2奈米結構的生長機制則被討論。
利用熱碳還原GeO2粉末，相同使用Ni催化生長模式，Ge和GeO2奈米結構也可被獲得。不過，生長GeO2奈米線的溫度則會被提高到720~750˚C，會比熱蒸鍍Ge粉末所生長GeO2奈米線在溫度600~660˚C來得高。
On the thermal evaporation of Ge powders at 950˚C in Ar, the growth of Ge nanowires (GeNWs), Ge nanobelts (GeNBs), and GeO2 nanowires (GeONWs) by the Ni catalyst was studied. The Ni-catalyzed growth of GeNWs and GeNBs at 420-500˚C followed the vapor-solid-solid (VSS) process with the top-growth mode. The GeNWs and GeNBs favored the <110> and <112>, and <112>growth orientations, respectively. The surface energy plays an important role in determining the growth direction of Ge nanostructures. At higher temperatures, 600~660˚C, the first VSS growth of GeONWs was observed. This result is contrary to the previous reports that the growth of GeONWs follows the vapor-solid (VS) process regardless of the presence of metal catalysts. The growth mode of Ni-catalyzed GeNWs may be independent of the synthesis method and growth temperature. Meanwhile, the growth mechanisms of Ni-catalyzed Ge and GeO2 nanostructures are discussed.
The same Ni-catalyzed growth mode of Ge and GeO2 nanostructures was also observed in the carbothermal reduction of GeO2 powders. However, the growth temperature of GeONWs raised up to 720~750˚C which are higher than that, 600~660˚C for the thermal evaporation of Ge powders.
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校內：2009-07-11公開校外：2009-07-11公開