一般針對太陽能電池之特性分析，大多著重在開路電壓、短路電流、填充因子及效率這四項基本特性的量測，相對之下較少研究針對IV 曲線做進一步探討。在本研究中，我們建立一套由太陽能電池IV曲線萃取特性參數之程式架構，分析的參數有光電流、飽和電流、串聯電阻、並聯電阻(導)以及理想因子，目的是希望藉由萃取以上參數，協助我們分析製程與結構尚可改進之處。此程式以套裝軟體MATLAB 2008 進行開發，使用基因演算法為求解架構，核心概念為太陽能電池Single Diode Model，萃取精確度以原始曲線與擬合曲線之間的Standard Deviation 為依據。以此程式萃取模擬曲線與實際量測曲線，原始曲線與擬合曲線之誤差小於3％，代表萃取結果相當接近正確值。最後應用於非晶系薄膜太陽能電池特性之探討與改善，藉由wxAMPS-1D 模擬與基因演算法萃取後證明在AZO 與p-a-SiC:H 之間插入一層p-uC-Si:H 後可改善接面特性並降低串聯電，最佳厚度7nm，與實際製程結果相近。

Usually, we identify solar cell characteristics by measuring four basic parameters － open circuit voltage、short circuit current、fill factor and efficiency, but seldom we analyze the IV curve. Actually we can get some useful details from IV curve to know how to improve structure or fabrication process of solar cells. In our dissertation, we developed a program which can extract solar cell parameters including photocurrent, saturation current, series resistance, shunt resistance (conductance) and ideal factor. The program was developed by MATLAB 2008, and we used Genetic Algorithm as a solution, incorporated with solar cell equivalent circuit Single Diode Model. Besides, we used standard deviation between original curve and fitted cure as criterion to estimate accuracy. After testing, the program could extract parameters with the standard deviation below 3%, this indicated that our program can function work well and
have good extraction. Finally, we connected the program with wxAMPS-1D, and applied to amorphous silicon solar cells TCO/p contact. We found that insertion layer p-uC-Si:H between AZO and p-a-SiC:H could improve front contact, and then reduce series resistance, and optimal thickness of p-uC-Si:H is 7nm. The simulation results are also identical to realistic process results.

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