本實驗中利用固相反應法製備鈀鉛氧及鈀鉛氧摻雜鈷塊材，以熱處理的方式在700~775度鍛燒出多晶純相。經由室溫霍爾效應量測確認所製備鈀鉛氧塊材具有電洞傳導之特性，且載子濃度隨著鈷摻雜量上升而增多。金屬-絕緣體轉變溫度隨著鈷摻雜量不同而有所變化，推測其原因可能是鈷摻雜效應與晶粒尺寸改變所致。利用超導量子干涉儀探討磁性，發現鈀鉛氧及鈀鉛氧摻雜鈷皆有室溫鐵磁性，並結合近緣吸收光譜量測結果，可進一步推測鈀鉛氧的鐵磁性來源應與鉛空缺有關；鈀鉛氧摻雜鈷的鐵磁性來源則可能是鈷離子摻雜和鉛空缺共存。

In this experiment, single phase PbPdO2 and Co-doped PbPdO2 bulks were synthesized through solid state method after sintering at 700~775°C. Via the Hall effect measurement, we confirmed the PbPdO2 and Co-doped PbPdO2 bulks are p-type semiconductors, and that the hole carrier concentration increases as the Co doping level increases. The metal-insulator transition temperature (TMI) varies as the Co doping level changes, which may due to the effect of grain size and Co doping. Superconducting quantum interference device magnetometer (SQUID) measurements show that the ferromagnetism (FM) exists in PbPdO2 and Co-doped PbPdO2 bulks at room temperature. Furthermore, combining with the results of X-ray absorption spectroscopy (XAS), we concluded that the ferromagnetism in PbPdO2 originates from the Pb vacancy and that the ferromagnetism in Co-doped PbPdO2 originates from the coexistence of Pb vacancy and Co doping.

[1].Charles Kittel, Introduction to Solid state physics, (1996), John Weley&Sons
[2].X.L. Wang, Phys. Rev. Lett. 100, 156404, (2008).
[3].K.S. Novoselov et al., Science 306 666 (2004).
[4].X. L. Wang, G. Peleckis, C. Zhang, H. Kimura, and S. Dou, Adv. Mater. 21, 2196 (2009).
[5].T. C. Ozawa, T. Taniguchi, Y. Nagata, Y. Noro, T. Naka, and A. Matsushida, J. Alloys Compd. 388, 1 (2005).
[6].K. J. Lee, S. M. Choo, J. B. Yoon, K. M. Song, Y. Saiga, C. Y. You, N. Hur, S. I. Lee, T. Takabatake, and M. H. Jung, J. Appl. Phys. 107, 09C306 (2010).
[7].K. J. Lee, S. M. Choo, Y. Saiga, T. Takabatake, and M. H. Jung, J. Appl. Phys. 109, 07C316 (2011).
[8].H. L. Su, S. Y. Huang, Y. F. Chiang, J. C. A. Huang, C. C. Kuo, Y. W. Du, Y. C. Wu, and R. Z. Zuo, APPLIED PHYSICS LETTERS 99, 102508 (2011)
[9].S. W. Chen, S. C. Huang, G. Y. Guo, J. M. Lee, S. Chiang, W. C. Chen, Y. C. Liang, K. T. Lu, and J. M. Chen, APPLIED PHYSICS LETTERS 99, 012103 (2011)
[10].S.W. Chen, S.C. Huang, G.Y. Guo, S. Chiang, J. M. Lee et al. APPLIED PHYSICS LETTERS 101, 222104 (2012)
[11].S.A. Touat, F. Litimein, A. Tadjer, B. Bouhafs, Physica B, 40, 625-6315, (2010).
[12].Xinran Wang et al. Science 324 768 (2009).
[13].Yanfei Pan, Zhongqin Yang, Phys. rev. B, 82, 195308, (2010).
[14].莊霈于(2012)，「鈷-碳非晶質薄膜之磁阻傳輸特性與電子結構探討」， 國立清華大學工程與系統科學系碩士論文。
[15].黃舜漁(2011)，「PbPd0.81Co0.19O2薄膜之結構與磁電特性研究」， 國立成功大學物理研究所碩士論文。
[16].施敏、黃調元(2006)，半導體元件物理與製作技術(第二版)，p.96-98。
[17].邱詩航(2012)，「p-型銅鋁氧化物薄膜及n-型氧化鋅奈米結構特性研究」 國立成功大學物理研究所博士論文
[18].General Area Detector Diffraction System (GADDS) user manual, USA: Technical Publications Department Bruker AXS Inc.
[19].邱詩航(2005)，「[Si 20 A/ MnX A]30 結構與磁、電特性研究」，國立成功大學物理研究所碩士論文。
[20].Aritra Banerjee, Sudipta Pal, S. Bhattacharya, B. K. Chaudhuri, and H. D. Yang, J. Appl. Phys., Vol. 91, No. 8, 15 (2002).
[21].K Ellmer, J. Phys. D: Appl. Phys, vol. 34 pp. 3097–3108, 2001.