本論文分為兩個部份，第一部份是利用TSMC 0.13-μm及0.18-μm CMOS製程，設計與實作24/60-GHz毫米波晶片嵌入式天線。包含，60-GHz圓形極化微帶天線、24/60-GHz雙頻帶倒L型與倒F型堆疊式天線。天線饋入方式採用微帶線架構。量測考量上，以on-wafer方式量測天線之VSWR與最大功率增益。對於天線之設計與模擬，採用Zealand IE3D及Ansoft HFSS電磁模擬軟體。對於60-GHz圓形極化天線，晶片尺寸為1.4 × 1.4 mm2。在57-64 GHz頻段，天線駐波比的量測值小於3。當頻率為60 GHz時，垂直極化與水平極化的最大功率量測值分別為 -10.6 及 -7.2 dBi。對於24/60-GHz雙頻帶倒L型與倒F型堆疊式天線，晶片尺寸分別為0.9 × 1.0 mm2和0.86 × 1.1 mm2。在24 GHz與57-64 GHz頻段，天線駐波比的量測值皆小於3。當頻率為24 與60 GHz時，倒L型天線的最大功率量測值分別為 -22.5 及 -8.3 dBi；倒F型堆疊式天線的最大功率量測值分別為 -23.0 及 -9.4 dBi。第二部份是多頻帶平面式手機天線之研製，以FR-4板材來實作。本天線可操作在GSM900/DCS1800/WLAN2450或藍牙系統。天線輻射體與天線RF基板之使用面積分別為15×45 mm2和100×45 mm2。天線駐波比量測上，除了GSM900頻帶，其他的通訊頻帶皆小於3.5。當頻率為920 MHz、1795與2450 MHz時，最大功率量測值分別為 0.8、2.4及2.2 dBi。

This thesis presents the design of 24/60-GHz CMOS on-chip antennas and a novel planar mobile antenna. The EM simulator IE3D and EM simulator HFSS are used for design simulation. Firstly, a 60-GHz circularly polarized microstrip antenna fabricated in a 0.13-μm CMOS process is proposed. The on-chip antenna measurements are performed via on-wafer probing. The chip size is 1.4 × 1.4 mm2. The measured input VSWR is less than 3 in the 57-64 GHz band. The measured maximum power gains with vertical and horizontal polarizations are about -10.6 and -7.2 dBi at 60 GHz, respectively. Secondly, two 24/60-GHz dual-band CMOS on-chip antennas fabricated in a 0.18-μm CMOS process are presented. The chip sizes for the inverted-L and stacked inverted-F antennas are 0.9 × 1.0 and 0.86 × 1.1 mm2, respectively. Both the measured input VSWRs are less than 3 in the 24 GHz band and 57-64 GHz band. For the inverted-L antenna, the measured maximum power gains are about -22.5 and -8.3 dBi at 24 and 60 GHz, respectively. For the stacked inverted-F antenna, the measured maximum power gains are about -23.0 and -9.4 dBi at 24 and 60 GHz, respectively. Finally, a multiband planar mobile antenna is fabricated using the FR-4 substrate. The antenna is operated at the GSM900/DCS1800, and WLAN2450 or Bluetooth system. The areas occupied by the antenna radiators and substrate are 15×45 and 100×45 mm2, respectively. Except for the GSM900 band, the measured input VSWR is less than 3.5 in the designed bands. The measured maximum antenna gains are about 0.8, 2.4, and 2.2 dBi at 920 MHz, 1795, and 2450 MHz, respectively.

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