本研究是以鈦鐵礦結構之鈦酸鋅(ZnTiO3)材料為探討對象，以等價數之Mg，Zr離子分別取代部分Zn與Ti離子，製備成(Zn1-xMgx)TiO3及Zn(ZrxTi1-x)O3多功能之陶瓷材料。本研究主要由四部份所構成: (1) 以溶膠-凝膠製程製備ZnTiO3粉末；(2) 以固態反應法合成ZnTiO3粉末；(3) 以固態反應法合成(Zn,Mg)TiO3及其性質研究；(4) 以固態反應法合成Zn(Ti,Zr)O3及其性質研究。
　　實驗結果顯示，以溶膠-凝膠製程製備之ZnTiO3粉末，前導物在煆燒分解過程當中，可分為四個步驟，分別為脫水反應、分解反應、燃燒(或氧化反應)與ZnTiO3相之生成反應。其結晶溫度約為510℃，最佳煆燒條件為800℃，10個小時。表面型態均為顆粒狀，顆粒很容易為降低表面能結合在一起而形成結團。但當煆燒溫度大於其分解溫度，則表面型態轉變為纖維狀。ZnTiO3結晶活化能約為160.50 kJ/mol，晶粒成長活化能約為16.36 kJ/mol。
　　以固態反應法合成ZnTiO3粉末，其結晶溫度約為820℃，因具有較大之粉末顆粒，其表面能減少而無法有效的降低其結晶活化能。其結晶活化能約等於308.66 kJ/mol，晶粒成長活化能約等於23.94 kJ/mol。最佳最佳煆燒條件為800℃，24小時，過高的溫度則造成結晶性下降。另外ZnTiO3於居理溫度以上具有PTCR效應，其居理溫度約等於5℃。
　　添加不同含量的MgO與ZrO2，因Mg2+與Zr4+離子取代的位置 不同而造成ZnTiO3表現出不同的特性。Mg2+離子可取代Zn2+離子，而形成(Zn1-xMgx)TiO3固溶體，其溶解極限值約等於10 at.%。 Mg2+離子的添加可以有效的增加ZnTiO3之熱穩定性，添加10 at.%的Mg，其熱穩定溫度約可以增加100℃。Mg的添加有細化ZnTiO3晶粒及增加ZnTiO3燒結緻密化程度的效果。(Zn1-xMgx)TiO3的介電常數與居理溫度均隨Mg含量的增加而增加。在900℃下燒結24小時之(Zn0.9Mg0.1)TiO3在共振頻率約8 GHz具有最佳的品質因子。而溫度係數隨著Mg含量的增加而愈接近於0。(Zn1-xMgx)TiO3試片具有PTCR特性。
　　Zr4+離子亦可以取代Ti4+離子，而形成Zn(Ti1-xZrx)O3固溶體。但其溶解極限值約等於5 at.%。Zr的添加亦可以有效的增加ZnTiO3之熱穩定性，添加10 at.%的Zr，其熱穩定溫度約可以增加45℃。與添加Mg一樣，Zr的添加有細化ZnTiO3晶粒的效果，但ZnTiO3的燒結緻密化程度卻因Zr的添加而減低。Zn(Ti,Zr)O3試片仍具有PTCR特性，Zn(Ti1-xZrx)O3之介電常數，消散因子均隨Zr含量的增加而減小。

　　The present investigation has been focused on the ZnTiO3, which has an ilmenite structure. The ZnTiO3 powders doped with Mg and Zr ions resulting (Zn,Mg)TiO3 and Zn(Ti,Zr)O3 multi-functional ceramics were synthesized. The experimentation consists of four parts, as ZnTiO3 powders preparation using sol-gel method, ZnTiO3 powders preparation by solid state reaction, synthesis and characterization of (Zn,Mg)TiO3 and synthesis and characterization of Zn(Ti,Zr)O3.
　　Experimental results show that the decomposition of the precursor proceeded through four major steps including dehydration reaction, decomposition, combustion reaction and ZnTiO3 phase formation. The ZnTiO3 phase was formed initially at 510℃and the optimum condition for ZnTiO3 powders is calcined at 800℃ for 10 h. The shape of grains will be changed from granular to fiber as the calcination temperature increasing from 800 to 1000℃. The activation energy of crystallization and grain growth for ZnTiO3 is ~ 160.50 kJ/mol and ~ 16.36 kJ/mol, respectively.
　　For solid state reaction, the crystallization temperature of ZnTiO3 powder was ~ 820℃, activation energy for crystallization was ~ 308.66 kJ/mol and ~ 23.94 kJ/mol for grain growth. In addition, ZnTiO3 is a V-type resistivity-temperature characteristics and possesses a typical PTCR properties above the Curie temperature (TC ~ 5℃).
　　For ZnTiO3 doped with MgO, the results revealed that Mg can replace the zinc ion and forms a solid solution in ZnTiO3 phase. The electrical resistivities of (Zn1-xMgx)TiO3 varied with sintering temperature, a minimum when sintered at 900℃ were obtained. Increasing amounts of Mg will also decrease the resistivity. A V-shaped temperature dependence of resistivity was observed. Furthermore, the dielectric constant increased with sintering temperature and decreased with increasing amounts of magnesium. It also shows a maximum Q factor (~1700) at a frequency of 8 GHz for the sample of (Zn0.9Mg0.1)TiO3 sintered at 900℃.
For ZnTiO3 doped with ZrO2, the results indicated that the phase stable region of the hexagonal Zn(Ti1-xZrx)O3 extended to higher temperature. The surface morphologies, densities and dielectric properties exhibited a significant dependence on the sintering temperature and the amounts of additions. It reveals that higher amount of Zr addition favors to inhibit the grain growth of matrix. There are severely decreases in densities but increases in dielectric constants for Zr doped samples that sintered at the temperature higher than 900℃. The dielectric constant decreased and Curie temperature (Tc) increased slightly with increasing the amounts of Zr ions. Furthermore, the diffuse phase transition in Zn(Ti1-xZrx)O3 was observed.

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