鎢具有高熔點、低電阻率、接近矽的熱膨脹係數、電導率穩定性、電遷移性小和大量均勻填充的特性。在半導體先進晶片，於金屬有機化學氣相沉積(MOCVD)製程中，鎢為首選材料。本文以MOCVD反應器沉積鎢為研究對象。利用計算流體力學模擬分析噴頭在MOCVD反應器中化學反應，探討反應器內的流場分佈情形與沉積率的影響。
本文探討MOCVD反應器的特性，並假設反應器內部為穩態層流流場。研究所討論的參數包括基板反應溫度、氣體流速、反應室操作壓力、WF₆與H₂的摩爾分數、噴頭孔徑，以及入口處是否添加擋板等。本文主要分析反應器內部的流場分佈與其對沉積率變化的影響，並以提升薄膜沉積的均勻性為目標。
本研究結果顯示，透過掌控基板反應溫度、氣體流速、反應室操作壓力、WF₆與H₂的摩爾分數、噴頭孔徑及入口處是否加裝擋板等參數，可有效優化反應器內的流場分佈、提升沉積率，並改善薄膜的沉積均勻性，對晶圓製程具有顯著助益。

This study employs Computational Fluid Dynamics (CFD) to simulate and analyze the deposition behavior of tungsten (W) thin films in a Metal-Organic Chemical Vapor Deposition (MOCVD) reactor. Owing to its low resistivity, excellent thermal stability, and thermal expansion coefficient close to silicon, tungsten is widely used in advanced semiconductor processes for contact and metal gate structures. This research focuses on a vertical showerhead-type MOCVD reactor and investigates how key process parameters affect the deposition rate and film thickness uniformity, providing insights for reactor design and process optimization.
A two-dimensional axisymmetric mesh was constructed using ICEM CFD, and flow field and chemical reactions were simulated using Ansys Fluent. The studied parameters include substrate temperature, gas flow rate, chamber pressure, mole fractions of WF₆ and H₂, showerhead orifice diameter, and the presence of a baffle plate near the inlet. The primary chemical reaction modeled is: WF6(g) + 3H2(g) → W(s) + 6HF(g)
Simulation results show that substrate temperature significantly influences the deposition mechanism: lower temperatures result in reaction-limited regimes with better uniformity, while higher temperatures lead to mass-transport-limited conditions and non-uniform deposition. Gas flow rate and showerhead design also affect deposition rate and distribution. Proper baffle design effectively improves gas uniformity. This research offers valuable references for optimizing MOCVD equipment and processing conditions, aiming to enhance the quality of tungsten film deposition.

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