本研究利用陽極氧化鋁模板輔助，進行電鍍沉積銅銦硒CulnSe2奈米柱材料，運用於薄膜太陽能電池之吸收層，相較於一般平面薄膜，本研究使CulnSe2材料成長為一維奈米柱結構，可使光吸收提升，並有助於元件效率提升。
模板的製備為使用鋁片在草酸中進行9小時之陽極氧化，製備陽極氧化鋁厚度約為27μm、孔洞半徑為40nm，再利用磷酸進行擴孔與阻擋層蝕刻，使孔洞開孔並擴孔至80nm。
針對電鍍沉積材料參數探討其填孔狀況與沉積品質，在最佳參數45oC下進行電化學沉積，並在電鍍液PH值參數中，以PH1.7為最佳，並可使材料由缺陷態較多之CIS(204/220)轉為理想CIS(112)晶相成長，材料沉積完後進行退火製程，克服了退火應力使試片破裂致之問題，順利的使材料晶相大幅提升，總結上述實驗成果，其銅銦硒奈米柱之CIS(112)材料品質FWHM(112)為0.369，晶粒大小為24.07nm，符合理想化學劑量比1:1:2，並由TEM分析出為類單晶結構。

We successfully fabricated ternary CuInSe2 nanowire arrays in a high temperature electrolyte using pulse electrodeposition techniques with the assistance of an anodized aluminum oxide (AAO) template. We investigated the effects of PH and annealing process on the composition and mono-like of CuInSe2 nanowires.
We obtained the mono-like of CuInSe2 nanowires by tuning the deposition temperature 45oC, PH1.7 and annealing temperature 550oC. The detailed microstructure of CuInSe2 nanowires were obtained from the transmission electron microscopy (TEM) analysis, which shows the mono-like of CuInSe2 nanowires regardless of the PH. Proposed mechanism for the growth mechanism of nanowires deposited in the electrolyte with high temperature was presented on the basis of kinetic and thermodynamic process. IV measurement showed that the CuInSe2 nanowires and Ag was a schottky contact.

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