中文摘要
　　在本研究之中，我們以擴散的方式將銻(antimony)金屬摻雜至氧化鋅薄膜內，用以製備銻攙雜的氧化鋅透明導電薄膜，而將銻攙雜至氧化鋅之後可以得到很好的導電度，並且在紫外光區有很高的穿透率。在不同溫度和不同時間熱處理薄膜之後，我們研究銻摻雜氧化鋅薄膜在光電特性上的表現，而研究結果顯示，將銻摻雜至氧化鋅薄膜後可以有效率地提升載子濃度並且降低電阻率，在光特性方面，隨著銻摻雜至氧化鋅薄膜，薄膜的吸收邊界往短波段飄移。在本研究之中，我們以900℃在氮器環境下將銻攙雜的氧化鋅薄膜熱處理1分鐘，結果薄膜的電阻率降低至5.1×10-4 Ω-cm，並且隨著銻攙雜至氧化鋅薄膜的重量百分比從3wt%增加至6wt%，載子濃度(ne)增加並且達到最大值1.16x1020cm-3，薄膜在可見光波段也有超過90%的穿透率。因為Burstein-Moss效應，原本氧化鋅能隙約為3.31eV，在摻雜6wt%銻至氧化鋅薄膜後，薄膜的吸收邊界大約在364.1nm，計算此時能隙則放大至3.406eV。而銻摻雜於氧化鋅薄膜後，功函數從5.3eV 放大至5.6eV。由於鋅與銻的離子半徑分別為0.72 Å 和0.76 Å，使得攙雜銻於氧化鋅薄膜後的晶格常數c從5.185Å 放大為 5.198Å，晶格常數a則從3.175Å 放大為 3.183 Å。

Abstract
　In this study, the Antimony (Sb) -doped zinc oxide films were prepared by diffusing Antimony into ZnO films. Sb -doped zinc oxide film ware found to possess superior conductivity and transmittance at ultraviolet wavelength. We investigated the optical and electrical performances of these films which are treated by various annealing times and temperatures. The results showed that Sb-doped ZnO films could effectively increase carrier concentration and decrease resistivity of the films. The optical absorption edge of ZnO films shifted toward a short wavelength with Sb doped in the ZnO films. The electrical properties of Sb-doped ZnO film annealed at 900℃ in N2 ambience for 1 minute shows that the lowest resistivity was 5.1×10-4 Ω-cm. As Sb in ZnO films increases from 3wt% to 6wt%, carrier concentrations (ne) also increases and reach a maximum value of 1.16x1020cm-3 for 6wt% Sb-doped film. The transmittance in the visible range was above 90%. The edge of absorption is 364.1nm after doping 6wt% Sb into ZnO film, because of Burstein-Moss effect, it is calculated that the Eg of ZnO films change from 3.31eV to 3.406eV. Doping Sb into ZnO leads to the increase of work function from 5.3eV to 5.6eV. The lattice constant c shifts from 5.185Å to 5.198Å, also the lattice constant a shifts 3.175Å to 3.183 Å. This shift is because of the ionic radius of Zn and Sb is 0.72 Å and 0.76 Å, respectively.

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