在本論文中，我們選用高摻雜硼之矽(111)基板，並利用摻雜在基板中的硼原子以及氨氣做為硼與氮的來源，大面積的成長六方氮化硼在矽基板上。接著我們利用低能量電子繞射(LEED)和掃描穿隧電子顯微術(STM)分析樣品表面的晶格結構，兩種結果都觀察到了moiré pattern，並顯示了當六方氮化硼成長在矽基板上後，會出現√3 × √3超晶格結構。

In this study, we use the Si(111)-heavy boron doping wafer to be the growth substrate. The doped boron atoms of the wafer and the ammonia (NH3) molecules are the sources to grow h-BN on Si substrate with high uniformity and wafer scale. The low-energy electron diffraction (LEED) and scanning tunneling microscope (STM) are use to characterize the lattice structure on the Si(111) substrate. Both techniques indicate the h-BN on Si(111) substrate having √3×√3 super structures with clear moiré pattern.

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