本論文的研究主題係藉由水熱法(hydro-thermal growth, HTG)進行選擇性一維氧化鋅奈米線之側向成長(ZnO nanowires, ZnO-NWs)，並將其應用於側向短間距二極及三極場發射(field emission, FE)元件、壓力及UV光感測器之製備，主要研究過程概分為下列五個部份進行：
第一部分中，我們針對三種不同的側向短間距場發射元件結構(無覆蓋Pt、有覆蓋Pt和有覆蓋Pt並under-cut)進行外觀型態及電性分析，實驗結果發現於覆蓋Pt電極且使用磷酸進行under-cut之後，方可完全阻隔ZnO-NWs向上成長，達到選擇性側向成長的ZnO-NWs，而三個不同元件所展現出的FE電特性之起始電場(EON)分別為4.88、3.79及3.04 V/μm (@I=10 μA)，電場增強因子(β)依序分別為2,556、4,901及7,439，顯然覆蓋Pt並under-cut之側向短間距元件可擁有較佳FE電特性。
第二部分將使用具有Pt覆蓋及under-cut之元件，討論四種分別約為1.7、2.4、3.1和5.7 μm-1之奈米線線密度(line density)，觀察其線密度對FE電特性之影響。其得到之起始電場(EON)與電場增強因子(β)分別為3.825、3.04、2.38和2.8 V/μm及6,943、7,439、10,359和8,502，此一結果顯示當側向短間距場發射元件線密度為3.1 μm-1時，可擁有較佳之FE電特性。
於第三部分中，我們將使用上述所製備之FE元件(覆蓋Pt電極、under-cut以及奈米線密度為3.1 μm-1)應用於不同真空壓力條件下所進行之場發射特性分析與探討。當壓力調變在8.110-7、5.310-5、5.310-4、5.310-3、3.210-2、及7.6102 Torr時所測得起始電壓(VON)分別為2.47、2.95、3.01、3.54、3.72及4.25 V (@I=10 μA)；於操作電壓為9 V時所得到之操作電流分別為272、228、191、167、124和84 μA；電場增強因子(β)則分別為5,269、5,255、4,856、4,613及4,577 μm-1。此一實驗結果顯示此元件隨著壓力的調變而展現不同之FE電特性，因此應用ZnO-NWs於壓力感測器材料預期將極具潛力。
於第四部分我們係將此一元件，分別置於UV光波長為366、254 nm及無光源之環境下進行FE電特性量測，所測得起始電壓(VON)分別為1.55、3.01和4.24 V (@I=10 μm)，操作電流分別為347、154及84 μA (V=9 V)，而場增強因子(β)分別為5,525、4,793和4,577 μm-1。此一結果顯示利用ZnO-NWs對UV光所產生之響應，將極適合進行UV光感測器之應用開發。
於第五部分方面，我們製備具電晶體特性之下閘極結構ZnO-NWs FE-triode元件。當閘極電壓Vg分別操作在50、40、30、0、-5和-10 V時，其EON分別約為12.8、15.4、16.6、18、18.3和18.6 V/μm (@Ja=10 mA/cm2)，Jmax為6.05、1.6、0.2、0.054、0.027和0.014 A/cm2 (@E=19 V/μm)，電場增強因子(β)亦分別約為385、259、194、178、165及119。當Vg=43 V時可得到最大的轉移電導(gm, max)約為2.4 μS，在場發射電流密度0.25 mA/cm2時，可以得到最大的μ=2.45。此可歸因於對本製備三極元件施加閘極正電壓可增強陰極發射端邊緣處之局部電場(local field)強度，進而誘發及加速陰極端電子之發射；而施加負偏壓將會降低陰極發射端之局部電場強度，也抑制了陰極電子之發射。
本研究以HTG製備出具有良好的高寬比之側向成長ZnO NWs，其不僅可應用於壓力感測器及UV光偵測器，另其在FE-triode之上擁有良好的場發射電晶體之特性，預期在未來於真空微電子元件應用上極具潛力。

In this thesis, the preparation of the lateral ZnO nanowires (ZnO-NWs) using hydro-thermal growth (HTG) method and its applications in lateral-structured field emission (FE) emitters (FE-diode and FE-triode) and pressure/UV sensors were investigated.
There are five parts comprised in this thesis. For the first part on lateral-structured FE emitters, three types of samples were proposed to have different selectivities for the lateral growth of ZnO NWs. Experimental results show that samples with Pt barrier layer and wet etching to the AZO side-walls structure could have the highest lateral growth selectivity. It shows a turn on electric field (EON) of 3.04 V/µm (@I=10 µA) and a field enhance factor (β) of 7439.
The second part focused on the screen effects of ZnO-NWs line density on FE characteristics. ZnO-NWs with a line density of 1.7, 2.4, 3.1 and 5.7 µm-1 were prepared and FE performances were examined. It is found that ZnO-NWs with a line density of 3.1 µm-1 exhibits the most satisfied FE performance with an EON of 2.8 V/µm and a β of 8502 among all prepared samples.
In the third part of this thesis, based on the sample with Pt coverage and AZO side-wall etching, responses to pressure sensing were presented and discussed. Experimental results show that, under ambient pressure of 8.110-7, 5.310-5, 5.310-4, 5.310-3, 3.210-2 and 7.6102 Torr, the measured values of Eon and β are with a dependence of 2.47, 2.95, 3.01, 3.54, 3.72, and 4.25 V (@I=10 A) and 5269, 5255, 4856, 4613, and 4577 µm-1 on the ambient pressure. It reveals that the proposed FE emitters based on lateral-structured ZnO NWs could be a potential device for pressure sensing applications.
In the fourth part of this thesis, the photo (366 and 254 nm UV lights) responses of the above-mentioned samples were reported and discussed. Our results show that the sample exhibits a better FE performances under 366 nm UV light irradiation than that under 254 nm one at the same photo power of 6 mW/cm2. Again, it suggests that the proposed FE emitters based on lateral-structured ZnO NWs could be a potential device for UV detectors.
In the final part of this thesis, bottom-gate FE-triode device based on laterally-grown ZnO NWs were fabricated and characterized. Under a gate bias (Vg) of 50, 40, 30, 0, -5, and -10 V, the measured EON are 12.8, 15.4, 16.6, 18, 18.3, and 18.6 V/µm (@J=10 mA/cm2), Jmax of 6.05, 1.6, 0.2, 0.054, 0.027, and 0.014 A/cm2 (@E=19 V/µm), and β of 385, 259, 194, 178, 165, and 119, respectively. The maximum transconductance (gm, max) of 2.4 µS was obtained at Vg=43 V and the maximum amplification factor (µ) of 2.45.
It is expected that HTG of lateral ZnO-NWs which are with the merits of high aspect-ratio could be a potential material for the applications in FE emitters and pressure/UV sensors, which could be very promising candidates for low-operating-voltage vacuum electronics in the near future.

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