本論文將選擇性離子佈植技術應用在氮化鎵發光二極體中，相較於傳統發光二極體，使多重量子井置於P-N junction外，形成N-P-MQW結構，並在不同元件尺寸與環境溫度下研究其光電特性與載子傳輸行為。

實驗上利用選擇性矽離子佈植技術是利用光阻當阻擋層來定義佈植區，透過此方式讓p-GaN轉換成n-GaN，並利用載子濃度差讓載子注入主動區。

從實驗結果來看離子佈植擴散輔助發光二極體隨著元件尺寸降低能提供更高的電流密度與亮度。由電致發光圖與光譜圖可證明載子能擴散注入到綠光量子井下的藍光量子井中。而在光型分佈中也發現隨著元件尺寸降低，電流壅擠現象獲得改善。在環境溫度部分，降溫過程光強度受非輻射復合機率下降與載子溢流彼此影響而互有變化，升溫過程受周圍環境溫度升高使載子溢流，使得光強度下降，但仍有部分上升是因為高能量載子飛過第一量子井在其餘量子井中複合所造成。

透過將元件面積縮小，縮短電極距離和載子擴散長度，載子輻射複合機率提升，因此改善光電特性，但效率衰減仍是離子佈植擴散輔助發光二極體需克服的問題。

In this paper, selective ion implantation technology is applied to gallium nitride light-emitting diodes. Compared with traditional light-emitting diodes, multiple quantum wells are placed outside the P-N junction to form an N-P-MQW structure and study its photoelectric characteristics and carrier transport behavior under different chip sizes and ambient temperatures. In experiments, the selective silicon ion implantation technology uses photoresist as a barrier layer to define the implantation area, converts p-GaN to n-GaN, and uses the carrier concentration difference to allow carriers to be injected into the active area. The experimental results show that the ion implantation diffusion assisted light emitting diode can provide higher current density and brightness as the chip size decreases. The electroluminescence and spectrogram can prove that carriers can be injected into the blue quantum well. In the light type distribution, it is also found that as the chip size decreases, the current crowding phenomenon is improved. In the ambient temperature part, the light intensity during the cooling process is affected by the decrease in the probability of non-radiative recombination and the carrier overflow. The heating process is affected by the increase in the ambient temperature and the carrier overflow, which causes the light intensity to decrease, but part of the increase is due to high-energy carriers fly through the first quantum well and recombine in the remaining quantum wells.

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