氧化鋅薄膜具有顯著的c 軸優先成長取向及透明性，但其電阻值卻偏高(約為1-100 Ω-cm)，其導電特性主要受制於氧空缺與鋅間隙原子。氧化鋅薄膜的性質深受其製備參數所影響。
　　在本研究裡，氧化鋅薄膜是於純氬氣中以射頻磁控濺鍍法來沈積。為了提升具高電阻的氧化鋅薄膜之導電性，同時採用射頻(RF)濺射ZnO靶材及MgF2靶材進行混鍍，摻雜MgF2於氧化鋅薄膜(ZnO: MgF2)，此薄膜稱為MZOF。研究射頻功率、膜厚、偏壓和熱處理等條件變化來探討MZOF薄膜之生長情況，更進一步藉此改善鍍層的導電性與透光性。實驗結果顯示，MZOF薄膜結構與ZnO相同，呈現（002）從優取向，且隨著MgF2功率增加，繞射峰有往高角度偏移之現象。由於F-取代O-2，可以增加載子濃度，使得電阻得以降低，當MgF2功率為75W時，電阻率可達1.707×10-2 Ω-cm，確實改善了ZnO薄膜的導電性質。另外，薄膜之穿透率在可見光範圍可達90%，Mg的添加使穿透曲線之吸收邊產生了藍移，使得光學能隙有寬化的現象，當MgF2功率為125W時，光學能隙Eg值可達4.26eV。

　The ZnO have a c-axis prefer grown in general and a high transparence, but its resistivity was high about 1-100 Ω-cm. Therefore it is considered for doping other elements as an substitution of zinc sites and to creat oxygen vacancy for increasing electron concentration. The doping materials including cation of Al and In, and anion of Cl and F, they play an important role in ZnO base films for the improved electrical conductivity with however no magnesium fluorite were found in literature . In this study, the co-sputtering technique was used to deposit the MgF2 doped ZnO films in argon atmosphere to obtain the deposited films so call “MZOF”. The film properties depend on the change of sputtering power, film thickness, substrate bias and post-heat treatment condition were investigated. The results showed that both of ZnO and MZOF films present the same structure and（002） textured as identified by XRD. The (002) peak ascribed to shift to high angle with the MgF2 doped increasing which is ascribed to the substitutional F- as opposed to O2-. Lowest resistivity of 1.707x10-2 Ω-cm can be obtained at the MgF2 target power of 75 W. The visble transmittance of MZOF films was up to 90%. The blue shift of the ultraviolet absorption edge and the optical band gap broaden are by the addition of Mg,. Highest opitical band gap of 4.08eV can be obtained at the MgF2 target power of 125 watts.

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