在本篇論文裡，針對以聚甲基丙烯酸甲酯(PMMA)為絕緣層製作之有機薄膜電晶體做了詳細的結構以及電特性的探討。在此實驗裡，我們選用四種不同的有機溶劑來溶解聚甲基丙烯酸甲酯，分別為甲苯、對二甲苯、鄰二氯苯以及氯仿，且以原子力顯微鏡來分析五聯苯(pentacene)成長在聚甲基丙烯酸甲酯薄膜上的粒徑大小以及粗糙度。在材料分析技術上，我們運用了X光繞射分析儀、接觸角、元素分析儀以及原子力顯微鏡來探討薄膜的成長品質。這部份的實驗證明了甲苯溶解聚甲基丙烯酸甲酯的效果是最好的。五聯苯薄膜成長於此溶液所製作之薄膜其品質也是最好。在此實驗中也發現用臭氧處理透明導電膜可降低流經聚甲基丙烯酸甲酯薄膜的漏電流。最大原因是聚甲基丙烯酸甲酯旋轉塗布於臭氧處理過的透明導電膜，其薄膜上的孔洞數量在25 μm2面積裡大幅減少從約47個降到19個。漏電流密度從1.5降到2.0 × 10-2 A/m2。藉由X光繞射分析儀及原子力顯微鏡對五聯苯的成長分析，以及不同厚度的元件電特性比較, 我們可以判定五聯苯成長於聚甲基丙烯酸甲酯薄膜的理想厚度為60 nm.

在本篇論文中，我們也以普遍常用到的二氧化矽為絕緣材料來製作有機薄膜電晶體，且以聚甲基丙烯酸甲酯之有機薄膜電晶體來比較，包括五聯苯的薄膜品質以及元件電特性。此研究證明了五聯苯薄膜沉積在聚甲基丙烯酸甲酯薄膜上之品質遠比沉積在二氧化矽表面來的好。實驗過程中，我們以X光繞射分析儀所量測出的數據推算出五聯苯沉積在聚甲基丙烯酸甲酯及二氧化矽的晶格品質。我們也使用了原子力顯微鏡來分析觀察五聯苯沉積在此兩絕緣層薄膜的表面型態以及藉由接觸角的量測推算出表面能的大小。以聚甲基丙烯酸甲酯為絕緣層所研製之有機薄膜電晶體其載子遷移率為0.241 cm2/Vs，整體電特性都遠比以二氧化矽為絕緣層之有機薄膜電晶體來的好。

加入氧化鉬(MoO3)於金跟五聯苯之間當做緩衝層可以得到更好的轉換特性; 臨界電壓 (VT) -11.5V、開關電流比7.7 × 104以及載子遷移率(μ)提升至0.48 cm2/Vs。藉由元素分析儀分析金跟五聯苯之介面，我們發現五聯苯之碳1s軌域的中心波峰有往高束縛能移動。對於金跟氧化鉬之間的0.2 eV能障，當VDS 持續提升時，載子能夠跳躍此能障進入氧化鉬薄膜，且有效的從氧化鉬薄膜注入到五聯苯薄膜。這就是為什麼當VDS增加到1.7 V，加入氧化鉬緩衝層的有機薄膜電晶體其特性會比沒有加入緩衝層元件來的好。除此之外，在鍍電極於五聯苯薄膜之前成長一層氧化鉬，能夠保護五聯苯在鍍電極的過程中免於破壞。因此我們可以藉由加入氧化鉬緩衝層來製作特性較好的有機薄膜電晶體。

The structure and electric characteristics of PMMA-based organic thin film transistor and their pentacene film grown on PMMA film have been investigated in this dissertation Four solvents, toluene, p-xylene, o-Dichlorobenzene, and chloroform were selected to dissolve PMMA and AFM was used to measure the grain size and roughness of pentacene grown on PMMA. Several material characterization techniques, such as X-ray diffraction (XRD), contact angle, X-ray photoelectron spectroscopy(XPS) and atomic force microscope (AFM) were performed to characterize the material quality. This study gave clear experimental evidence that the quality of pentacene grown on the PMMA dielectric layer dissolved in toluene is the best choice. The treatment of UV-ozone on ITO surface can reduces the leakage current through PMMA dielectric layer. With the UV-ozone cleaner treatment for ITO surface, the average number of pinholes in PMMA film deposited the ITO reduces from 47 to 19 (in 25 μm2 area). The leakage current density reduces from 1.5 to 2.0 × 10-2 A/m2. According to the analysis of XRD and AFM measurements, the optimum pentacene thickness grown on PMMA film was 60 nm.

In this dissertation, we have also compared the performance of PMMA-based OTFTs with that of SiO2-based OTFTs, including pentacene film quality and electric characteristics. This study also gave clear experimental evidence that the quality of pentacene grown on the PMMA layer was better than that grown on SiO2 dielectric layer. XRD was used to measure the diffraction intensity in order to observe the crystalline quality of pentacene thin film on PMMA and SiO2. AFM was also used to measure the grain size and roughness of pentacene grown on PMMA and SiO2 and subsequently deduce a match in surface free energy between pentacene and PMMA. The maximum saturation field-effect mobility was 0.241 cm2/V s. It was also found that the electric characteristics of OTFT with PMMA dielectric layer were beter than that of OTFT with SiO2 dielectric layer.

The excellent transfer characteristics of pentacene-based OTFTs with PMMA as dielectric layer were obtained: drain saturation current (3 μA at VGS = -50 V and VDS = -50 V), threshold voltage (VT = -11.5 V), on/off current ratio (7.7 × 104), and field-effect mobility (μsat = 0.48 cm2/Vs) were obtained by inserting the MoO3 buffer layer. The MoO3/pentacene interface was analyzed by XPS and found the C1s core level peak in MoO3/pentacene interface shifted to higher binding energy. For the energy barrier of 0.2 eV in Au/MoO3 interface, the carriers can sufficiently jump the energy barrier into MoO3 layer as VDS increases, and than efficiently inject into pentacene film. This is why the performance of OTFTs with MoO3 buffer layer can be enhanced as VDS is more than 1.7 V. Besides, the MoO3 buffer layer was also a protector against the penetration phenomena, which would cause interface dipole barrier. Therefore, excellent performance of pentacene-based thin film transistors will be achieved by inserting a MoO3 buffer layer.

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