我們以電介質放電(DBD)的形式，將氮氣分子進行離子化或激發反應，形成具有氮電漿輔助的水平式爐管系統。將鎵與氮自由基經由氣-液-固機制(VLS) 製備出高純度及高產率的氮化鎵奈米線。
以矽基板成長氮化鎵奈米線，由掃描式電子顯微鏡觀察藉由氮電漿系統所成長的奈米線之成長速率非常快，反應時間只需十分鐘就可以成長約數微米以上長度的奈米線。除此之外，奈米線的產率高而且奈米線的直徑非常細。由X-ray繞射儀及穿透式電子顯微鏡(TEM)的鑑定，大部份奈米線的結構為纖維鋅礦(wurtzite)的結構，晶體的成長方向為[100]。光激發螢光光譜儀的分析結果，則顯示了當成長溫度較低時，在3.2eV位置的波峰訊號，顯示可能有閃鋅結構的氮化鎵生成。當矽基板的成長溫度增加到910℃時，光激發螢光光譜(PL)的波峰位置會有藍位移現象出現。這現象顯示在較高溫度下，氮化鎵的結構會趨向以纖維鋅礦(wurtzite)結構為主。因此，氮電漿輔助功能的水平式爐管系統比一般傳統成長氮化家奈米線的方法，更可以製備出高產率且成長速率極快的氮化鎵奈米線。同時也可以將GaN奈米線的物理特性將其應用在光電元件上。

Nitrogen atoms are ionized or excited by dielectric barrier discharge (DBD) to form a horizontal furnace system with nitrogen plasmas. By Vapor-Liquid-Solid(VLS) mechanics gallium atoms and nitrogen radicals form gallium nitride nanowires with high quality and high production.

The substrate we use to grow GaN nanowires is silicon wafer. By SEM morphology we found that the growth rate of GaN nanowires in plasma system was very fast. Only 10 minutes reaction time, the length of GaN nanowires had grown to nanometer order. Besides, the diameter is very small and the production is high. Most of crystals are wurtzite structure by X-ray and TEM analysis and the growth direction is [100]. SEM images showed the high production and the long length of these GaN nanowires. The PL measurement revealed that the zinc blend structure of GaN nanowires could form in the low substrate temperature. When substrate temperature increased to 910C, the PL peak position had blue shift from 3.2eV to 3.35eV. This information suggested that the wurtzite structure GaN nanowires were easily existed in the high substrate temperature.

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