在此研究中，我們利用兩次電化學沉積法在陽極氧化鋁膜板中沉積氧化亞銅與氧化鋅之殼層異質接合奈米線。為了避免累積的氫氣妨礙電化學沉積，我們選擇利用孔洞大小介於100~140 nm的氧化鋁作為輔助模板。第一次沉積為控制電流密度下沉積金屬銅奈米線，利用XRD圖譜分析確定在每平方公分5毫安培之電流密度的沉積條件下有金屬銅在氧化鋁膜板中沉積。經由TEM的分析發現，隨著沉積電流密度的增加，其金屬銅之結晶性也有提升。當電流密度提高至20mA/cm2時，可在氧化鋁膜板中形成單晶之金屬銅奈米線。
進行第二次沉積前，我們利用氫氧化納移除部分氧化鋁膜板，以增加電極與電解質的接觸面積。第二次沉積是利用銅奈米線作為電極沉積金屬鋅，形成銅/鋅之複合奈米線。
最後，我們進行400 oC之退火處理將銅/鋅之複合奈米線氧化，形成氧化亞銅/氧化鋅之異質接合奈米線。氧化亞銅/氧化鋅之異質接合奈米線之平均長度約為7 um，而其直徑約為140 nm。

In this research, we used two-step electrochemical deposition to synthesize the Cu2O/ZnO core-shell heterojunction nanorod in the porous alumina membrane. We used the porous alumina membrane with pore sizes in the range from 100 to 140 nm as the template in order to avoid the hydrogen accumulated, which will prejudiced the electrochemical deposition. The first deposition was controlled the current density of deposition to deposit the copper metal nanowire, and when the deposition conditions of the current density was 5mA/cm2, the copper were deposited in the porous alumina membrane which determined from X-ray diffraction (XRD) patterns. By the TEM analysis, we found the crystalline of copper will improved with increasing the current density of deposition. When the current density was increased to 20mA/cm2, the single crystal copper nanowires were synthesized in the porous alumina membrane.
Before the second deposition, we used the NaOH to remove the alumina template, in order to increase the contact area of the electrode and electrolyte. The second deposition used the copper nanowire as the electrode to deposit the zinc, the formation of Cu / Zn heterojunction nanowires.
Finally, we annealed the Cu/Zn heterojunction nanowires at 400 oC to syn-thesize the Cu2O/ZnO heterojunction nanowires.The average length and average of the Cu2O-ZnO heterojunction nanowire were 7 um and 140 nm.

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