本研究利用反應式磁控濺鍍系統製備富矽氮化矽(Silicon-rich nitride, SRN)薄膜，並藉由改變退火製程、金屬摻雜形成複合薄膜及沈積在不同孔洞大小的陽極氧化鋁(Anodic aluminum oxide, AAO)模板等，對薄膜的微結構與發光性質的影響進行比較。結果性質分析方面，以低掠角X光繞射儀(GIXRD)分析其微結構與結晶相；以高解析場發射式掃描式電子顯微鏡(HR-SEM)觀察薄膜表面形貌；以傅立葉轉換紅外線分光光譜儀(FTIR)、X光光電子能譜儀(XPS)及拉曼光譜(Raman)進行薄膜化學組成與鍵結分析；以光激發螢光光譜(PL)觀察其薄膜的發光行為性質。
本論文第一部份為不同退火製程對SRN薄膜微結構與發光性質的影響之研究。當使用CO2雷射退火的SRN薄膜結晶性及鍵結強度都較高真空爐內退火來得佳，這是因為CO2雷射退火瞬間產生的能量較高將有助於析出矽奈米晶粒，且在PL光譜有明顯的可見光發光強度，這是因為薄膜界面的鍵結所產生的非輻射缺陷能態在高溫下被移除，與矽奈米晶粒鑲嵌在SiNx基質中，所引起的量子尺寸與Si-N鍵結的侷限態效應的貢獻。本論文第二部份討論金屬(Al、Ti、Ta)摻雜SRN形成複合薄膜的微結構與發光性質的影響，在大氣下高溫退火700 °C使薄膜氧含量增加且參與反應形成金屬氧化物，相較於單層SRN薄膜，此金屬氧化物的形成所產生的深層能階發光和結晶相中晶格發光將有助於SRN複合薄膜整體的發光強度及波段提升，因此有機會應用在發光元件上。而本論文最後一部份討論矽奈米晶粒鑲嵌於AAO模板上的研究，基於模板的空間限域作用來控制矽奈米晶粒的大小，且隨著半導體奈米晶粒的量子尺寸效應對能帶結構的影響，進一步控制PL的發光波段。

In this study, silicon-rich nitride (SRN) thin films were deposited on the Si(100) substrates and anodic aluminum oxide (AAO) templates by radio frequency reactive magnetron sputtering. We investigated different annealing process, annealing temperature and metal doping affects the SRN nanocomposites thin films. The material properties include microstructure, surface morphology and photoluminescence behaviors of the SRN and metal doped SRN films. We used grazing incidence X-ray diffraction (GIXRD) to analyze crystal phase, high-resolution field emission scanning electron microscope (HR-SEM) to analyze surface morphology, Raman spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) to analyze the chemical compositions and bonding, photoluminescence (PL) to measure band gap of the SRN and metal doped SRN films. Then we used these results to explain our experimental data.
In the first part, the microstructure and photoluminescence property of SRN thin films as function of different annealing process were discussed. The CO2 laser annealing was better than high vacuum annealing to increase crystalline and bonding intensity, because the CO2 laser energy generate higher energy will help to precipitate silicon nanocrystals. Due to the nc-Si, defect states in imperfection of interface between the Si-O-Si and the located state related to the Si-N bond in the SiNx matrix to produce the visible PL and increasing temperature enhances the formation of more recombination in the localized states of Si-N bonds and nc-Si for the improved PL intensity. In the second part, the microstructure and optoelectronic characteristics of metal (Al, Ti, Ta) doped SRN nanocomposite films were discussed. High temperature annealing in the air will increase the oxygen content of the films and will form the metal oxide. Compared to single layer SRN film, this metal oxides produced the deep-level emissions of oxygen vacancies and lattice emissions will help metal doped SRN nanocomposite films as a whole to enhance the luminous intensity and wavelength. Therefore, the nanocomposite films with novel metal doped PL should apply to the optoelectronic devices. In the final part, the effect of different size AAO porous on the evolution of microstructure and PL behavior by nc-Si on AAO template, due to the spatially confined synthesis of AAO template that the size of nc-Si could be controlled by the pore diameter of AAO template. Quantum size effect was obvious for the present samples and remarkable red shift was shown in the obtained spectra.

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