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研究生: 謝維軒
Hsieh, Wei-Hsuan
論文名稱: 以濺鍍法製備氧化鉿及氧化鋁系列多層電阻式記憶體之研究
An Investigation of HfO2 and Al2O3 Based Multilayer Resistive Random Access Memory by RF-sputtering
指導教授: 蘇炎坤
Su, Yan-Quin
學位類別: 碩士
Master
系所名稱: 智慧半導體及永續製造學院 - 半導體製程學位學程
Program on Semiconductor Manufacturing Technology
論文出版年: 2024
畢業學年度: 112
語文別: 英文
論文頁數: 105
中文關鍵詞: 電阻式記憶體氧化鉿氧化鋁三層結構氧電漿處理
外文關鍵詞: Resistive Random-Access Memory, HfO2, Al2O3, Tri-layer Structure, Oxygen Plasma Treatment
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  • 本論文以射頻濺鍍沉積系統製作氧化鉿為基底薄膜之電阻式記憶體元件,其結構為金屬鋁電極(Al)/氧化鉿薄膜基底(HfO2-based)/氧化銦錫(ITO)。實驗分成三個部分。首先探討不同純氧化鉿的厚度對於記憶體元件的影響。當薄膜厚度為20奈米時發現元件展現出了出色的性能。具有相對低的設置/重設電壓(4.32 V/-1.61 V),且具有足以辨別高低阻態的電流開關比為7×103且具有611次的循環切換次數。
    接著討論加入不同厚度氧化鋁材料作為切換層在氧化鉿中間,且固定總厚度為20奈米,形成氧化鉿/氧化鋁/氧化鉿三層介電層結構。透過實驗可得出在氧化鋁厚度為6奈米時有著最佳的電性。透過兩個材料氧空缺的差異能使得導電路徑的組成及斷裂更為穩定,進而降低設置/重設電壓(3.94 V/-1.38 V),且氧化鋁的高能隙提升了電流開關比為1.74×104,並具有1104次的循環切換次數和104的高資料保存性。
    最後以此三層結構進行不同功率氧電漿處理來進一步改善特性,經過分析後發現使用75瓦在此三層結構中表現出最佳的記憶體性能。設置/重設電壓分別降低為 3.52 V/-1.01 V,電流開關比為5.51×104,由於氧氣含量的提升,切換次數進一步提升到1614次且同時保持了104的高資料保存性,更成功地進行了多級組態的實驗。

    This paper uses an RF-sputtering deposition system to create resistive random-access memory (RRAM) devices based on HfO2 thin films. The structure consists of aluminum electrodes /HfO2-based thin films/indium tin oxide. The experiment is divided into three parts. First, the impact of different thicknesses of pure HfO2 on memory devices is explored. When the film thickness is 20 nm, the devices exhibit excellent performance, with relatively low SET/RESET voltages (4.32 V/-1.61 V), a current ON/OFF ratio of 7×103, and 611 switching cycles.
    Next, the addition of different thicknesses of Al2O3 as a switching layer between HfO2, with a total thickness fixed at 20 nm, forming a HfO2/Al2O3/HfO2 tri-layer dielectric structure. The experiments show that when the Al2O3 thickness is 6 nm, the electrical performance is optimal. The difference in oxygen vacancies between the two materials makes the formation and rupture of conductive paths more stable, thereby reducing the SET/RESET voltages (3.94 V/-1.38 V). The high bandgap of Al2O3 increases the current ON/OFF ratio to 1.74×104, with 1104 switching cycles and high data retention of 104 seconds.
    Finally, different power levels of oxygen plasma treatment are applied to this tri-layer structure to further improve its characteristics. The analysis shows that using 75W of oxygen plasma power in this tri-layer structure achieves the best memory performance, reducing the SET/RESET voltages to 3.52 V/-1.01 V, increasing the current ON/OFF ratio to 5.51×104. Due to the increased oxygen content, the number of switching cycles further increases to 1614 while maintaining high data retention of 104 seconds, and successfully achieves multi-level state experiments.

    中文摘要 I Abstract II Acknowledgements IV Contents V List of tables X List of Figures XI Chapter 1 Introduction 1 1-1 Non-volatile Memory 1 1-1.1 Flash Memory 2 1-1.2 Ferroelectric Random Access Memory (FeRAM) 3 1-1.3 Phase-change Random Access Memory (PCRAM) 4 1-1.4 Magnetoresistive Random Access Memory (MRAM) 5 1-1.5 Resistive Random Access Memory (RRAM) 6 1-2 Motivation 7 Chapter 2 Literature Review 9 2-1 Characteristic of RRAM 9 2-1.1 Forming Process 9 2-1.2 SET/RESET Process 10 2-1.3 I-V Characteristic 11 2-1.4 Switching Cycle and ON/OFF Ratio 12 2-1.5 Retention Time 13 2-2 Conduction Mechanisms 13 2-2.1 Ohmic Conduction 14 2-2.2 Space-Charge-Limited Conduction (SCLC) 15 2-2.3 Poole-Frenkel Emission 16 2-2.4 Schottky Emission 17 2-2.5 Fowler-Nordheim Tunneling 19 Chapter 3 Experiment Process 20 3-1 Experiment Equipment 20 3-1.1 Radio Frequency Sputtering Deposition System 20 3-1.2 Thermal Evaporator Deposition System 22 3-1.3 Vacuum Plasma Treatment System 23 3-2 Device Fabrication 24 3-3 Measuring Instruments 25 Chapter 4 Sputtering HfO2 as the dielectric layer for RRAM 26 4-1 Electrical Properties 27 4-1.1 I-V Characteristics and Forming Voltage 27 4-1.2 SET/RESET Voltage Box 27 4-1.3 Switching Cycles and ON/OFF Ratio 28 4-1.4 Retention Time 28 4-1.5 Conduction Mechanism 29 4-2 Physical Properties 39 4-2.1 XRD 39 4-2.2 AFM 39 4-2.3 XPS 39 4-3 Summary 41 Chapter 5 Sputtering HfO2/Al2O3/HfO2 tri-layer RRAM 43 5-1 Electrical Properties 44 5-1.1 I-V Characteristics and Forming Voltage 44 5-1.2 SET/RESET Voltage Box 45 5-1.3 Switching Cycles and ON/OFF Ratio 45 5-1.4 Retention Time 46 5-1.5 Conduction Mechanism 46 5-1.6 Tri-layer Conduction Filament Mechanism 46 5-2 Physical Properties 58 5-2.1 XRD 58 5-2.2 AFM 58 5-2.3 XPS 58 5-3 Summary 63 Chapter 6 Oxygen plasma treatment on HfO2/Al2O3/HfO2 tri-layer RRAM 64 6-1 Electrical Properties 65 6-1.1 I-V Characteristics and Forming Voltage 65 6-1.2 SET/RESET Voltage Box 66 6-1.3 Switching Cycles and ON/OFF Ratio 66 6-1.4 Retention Time 67 6-1.5 Conduction Mechanism 67 6-1.6 Multi-level State 68 6-2 Physical Properties 78 6-2.1 XRD 78 6-2.2 AFM 79 6-2.3 XPS 79 6-3 Summary 83 Chapter 7 Conclusion and Future Work 84 7-1 Conclusion 84 7-2 Future Work 86 Reference 87

    [1] F. Bai, X. Han, and L. Pan, "Memory Design," in Handbook of Integrated Circuit Industry, Y. Wang, M.-H. Chi, J. J.-C. Lou, and C.-Z. Chen Eds. Singapore: Springer Nature Singapore, 2024, pp. 779-801.
    [2] R. Bez, E. Camerlenghi, A. Modelli, and A. Visconti, "Introduction to flash memory," Proceedings of the IEEE, vol. 91, no. 4, pp. 489-502, 2003.
    [3] K. Eshraghian, "Evolution of nonvolatile resistive switching memory technologies: the related influence on hetrogeneous nanoarchitectures," Transactions on Electrical and Electronic Materials, vol. 11, no. 6, pp. 243-248, 2010.
    [4] X. Xiao et al., "Performance of LiTaO3 crystals and thin films and their application," Crystals, vol. 13, no. 8, p. 1233, 2023.
    [5] H. W. Shin and J. Y. Son, "Nonvolatile ferroelectric memory based on PbTiO 3 gated single-layer MoS 2 field-effect transistor," Electronic Materials Letters, vol. 14, pp. 59-63, 2018.
    [6] M.-X. Jia et al., "Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures," Applied Physics Letters, vol. 114, no. 10, 2019.
    [7] K. Konstantinou, T. H. Lee, F. C. Mocanu, and S. R. Elliott, "Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material," Proceedings of the National Academy of Sciences, vol. 115, no. 21, pp. 5353-5358, 2018.
    [8] Y. Gu et al., "Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory," Scripta Materialia, vol. 65, no. 7, pp. 622-625, 2011.
    [9] X. Fong, Y. Kim, R. Venkatesan, S. H. Choday, A. Raghunathan, and K. Roy, "Spin-transfer torque memories: Devices, circuits, and systems," Proceedings of the IEEE, vol. 104, no. 7, pp. 1449-1488, 2016.
    [10] T. Hatori, H. Ohmori, M. Tada, and S. Nakagawa, "MTJ elements with MgO barrier using RE-TM amorphous layers for perpendicular MRAM," IEEE transactions on magnetics, vol. 43, no. 6, pp. 2331-2333, 2007.
    [11] F. Zahoor, T. Z. Azni Zulkifli, and F. A. Khanday, "Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications," Nanoscale research letters, vol. 15, pp. 1-26, 2020.
    [12] B. Mu, H.-H. Hsu, C.-C. Kuo, S.-T. Han, and Y. Zhou, "Organic small molecule-based RRAM for data storage and neuromorphic computing," Journal of Materials Chemistry C, vol. 8, no. 37, pp. 12714-12738, 2020.
    [13] C. Zhang, Y. Li, C. Ma, and Q. Zhang, "Recent progress of organic–inorganic hybrid perovskites in RRAM, artificial synapse, and logic operation," Small Science, vol. 2, no. 2, p. 2100086, 2022.
    [14] B. Ku, Y. Abbas, A. S. Sokolov, and C. Choi, "Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors," Journal of Alloys and Compounds, vol. 735, pp. 1181-1188, 2018.
    [15] Y. Qi et al., "Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents," Semiconductor Science and Technology, vol. 33, no. 4, p. 045003, 2018.
    [16] H. Y. Jeong, Y. I. Kim, J. Y. Lee, and S.-Y. Choi, "A low-temperature-grown TiO2-based device for the flexible stacked RRAM application," Nanotechnology, vol. 21, no. 11, p. 115203, 2010.
    [17] Y. Ahn and J. Y. Son, "Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0. 95 layer," Ceramics International, vol. 47, no. 7, pp. 9342-9346, 2021.
    [18] H.-S. P. Wong et al., "Metal–oxide RRAM," Proceedings of the IEEE, vol. 100, no. 6, pp. 1951-1970, 2012.
    [19] A. Padovani, L. Larcher, O. Pirrotta, L. Vandelli, and G. Bersuker, "Microscopic modeling of HfO x RRAM operations: From forming to switching," IEEE Transactions on electron devices, vol. 62, no. 6, pp. 1998-2006, 2015.
    [20] N. Raghavan et al., "Statistical insight into controlled forming and forming free stacks for HfOx RRAM," Microelectronic Engineering, vol. 109, pp. 177-181, 2013.
    [21] J. Wang, L. Li, H. Huyan, X. Pan, and S. S. Nonnenmann, "Highly uniform resistive switching in HfO2 films embedded with ordered metal nanoisland arrays," Advanced Functional Materials, vol. 29, no. 25, p. 1808430, 2019.
    [22] S. Yu and H.-S. P. Wong, "A phenomenological model for the reset mechanism of metal oxide RRAM," IEEE Electron Device Letters, vol. 31, no. 12, pp. 1455-1457, 2010.
    [23] S. Long et al., "A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown," IEEE electron device letters, vol. 34, no. 8, pp. 999-1001, 2013.
    [24] F. M. Simanjuntak, D. Panda, K.-H. Wei, and T.-Y. Tseng, "Status and prospects of ZnO-based resistive switching memory devices," Nanoscale research letters, vol. 11, pp. 1-31, 2016.
    [25] Y. Hosoi et al., "High speed unipolar switching resistance RAM (RRAM) technology," in 2006 International Electron Devices Meeting, 2006: IEEE, pp. 1-4.
    [26] D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth," IEEE Transactions on Electron Devices, vol. 58, no. 12, pp. 4309-4317, 2011.
    [27] A. Prakash et al., "Multi-state resistance switching and variability analysis of hfo x based rram for ultra-high density memory applications," in 2015 International Symposium on Next-Generation Electronics (ISNE), 2015: IEEE, pp. 1-2.
    [28] Y. Y. Chen et al., "Improvement of data retention in HfO 2/Hf 1T1R RRAM cell under low operating current," in 2013 IEEE International Electron Devices Meeting, 2013: Ieee, pp. 10.1. 1-10.1. 4.
    [29] F.-C. Chiu, "A review on conduction mechanisms in dielectric films," Advances in Materials Science and Engineering, vol. 2014, no. 1, p. 578168, 2014.
    [30] F. Gul, "A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices," Materials Today: Proceedings, vol. 46, pp. 6976-6978, 2021.
    [31] F.-Y. Yuan et al., "Conduction mechanism and improved endurance in HfO 2-based RRAM with nitridation treatment," Nanoscale research letters, vol. 12, pp. 1-6, 2017.
    [32] W.-K. Hsieh, K.-T. Lam, and S.-J. Chang, "Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias," Materials Science in Semiconductor Processing, vol. 35, pp. 30-33, 2015.
    [33] N. C. S. Vieira, E. G. R. Fernandes, A. A. A. d. Queiroz, F. E. G. Guimarães, and V. Zucolotto, "Indium tin oxide synthesized by a low cost route as SEGFET pH sensor," Materials Research, vol. 16, pp. 1156-1160, 2013.
    [34] T. Wu et al., "Oxygen vacancy-mediated activates oxygen to produce reactive oxygen species (ROS) on Ce-modified activated clay for degradation of organic compounds without hydrogen peroxide in strong acid," Nanomaterials, vol. 12, no. 24, p. 4410, 2022.
    [35] E. A. Khera et al., "Improved resistive switching characteristics of a multi-stacked HfO₂/Al₂O₃/HfO₂ RRAM structure for neuromorphic and synaptic applications: experimental and computational study," 2022.
    [36] L. Chen, Y.-W. Dai, Q.-Q. Sun, J.-J. Guo, P. Zhou, and D. W. Zhang, "Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages," Solid State Ionics, vol. 273, pp. 66-69, 2015.

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