研究生: |
謝維軒 Hsieh, Wei-Hsuan |
---|---|
論文名稱: |
以濺鍍法製備氧化鉿及氧化鋁系列多層電阻式記憶體之研究 An Investigation of HfO2 and Al2O3 Based Multilayer Resistive Random Access Memory by RF-sputtering |
指導教授: |
蘇炎坤
Su, Yan-Quin |
學位類別: |
碩士 Master |
系所名稱: |
智慧半導體及永續製造學院 - 半導體製程學位學程 Program on Semiconductor Manufacturing Technology |
論文出版年: | 2024 |
畢業學年度: | 112 |
語文別: | 英文 |
論文頁數: | 105 |
中文關鍵詞: | 電阻式記憶體 、氧化鉿 、氧化鋁 、三層結構 、氧電漿處理 |
外文關鍵詞: | Resistive Random-Access Memory, HfO2, Al2O3, Tri-layer Structure, Oxygen Plasma Treatment |
相關次數: | 點閱:102 下載:0 |
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本論文以射頻濺鍍沉積系統製作氧化鉿為基底薄膜之電阻式記憶體元件,其結構為金屬鋁電極(Al)/氧化鉿薄膜基底(HfO2-based)/氧化銦錫(ITO)。實驗分成三個部分。首先探討不同純氧化鉿的厚度對於記憶體元件的影響。當薄膜厚度為20奈米時發現元件展現出了出色的性能。具有相對低的設置/重設電壓(4.32 V/-1.61 V),且具有足以辨別高低阻態的電流開關比為7×103且具有611次的循環切換次數。
接著討論加入不同厚度氧化鋁材料作為切換層在氧化鉿中間,且固定總厚度為20奈米,形成氧化鉿/氧化鋁/氧化鉿三層介電層結構。透過實驗可得出在氧化鋁厚度為6奈米時有著最佳的電性。透過兩個材料氧空缺的差異能使得導電路徑的組成及斷裂更為穩定,進而降低設置/重設電壓(3.94 V/-1.38 V),且氧化鋁的高能隙提升了電流開關比為1.74×104,並具有1104次的循環切換次數和104的高資料保存性。
最後以此三層結構進行不同功率氧電漿處理來進一步改善特性,經過分析後發現使用75瓦在此三層結構中表現出最佳的記憶體性能。設置/重設電壓分別降低為 3.52 V/-1.01 V,電流開關比為5.51×104,由於氧氣含量的提升,切換次數進一步提升到1614次且同時保持了104的高資料保存性,更成功地進行了多級組態的實驗。
This paper uses an RF-sputtering deposition system to create resistive random-access memory (RRAM) devices based on HfO2 thin films. The structure consists of aluminum electrodes /HfO2-based thin films/indium tin oxide. The experiment is divided into three parts. First, the impact of different thicknesses of pure HfO2 on memory devices is explored. When the film thickness is 20 nm, the devices exhibit excellent performance, with relatively low SET/RESET voltages (4.32 V/-1.61 V), a current ON/OFF ratio of 7×103, and 611 switching cycles.
Next, the addition of different thicknesses of Al2O3 as a switching layer between HfO2, with a total thickness fixed at 20 nm, forming a HfO2/Al2O3/HfO2 tri-layer dielectric structure. The experiments show that when the Al2O3 thickness is 6 nm, the electrical performance is optimal. The difference in oxygen vacancies between the two materials makes the formation and rupture of conductive paths more stable, thereby reducing the SET/RESET voltages (3.94 V/-1.38 V). The high bandgap of Al2O3 increases the current ON/OFF ratio to 1.74×104, with 1104 switching cycles and high data retention of 104 seconds.
Finally, different power levels of oxygen plasma treatment are applied to this tri-layer structure to further improve its characteristics. The analysis shows that using 75W of oxygen plasma power in this tri-layer structure achieves the best memory performance, reducing the SET/RESET voltages to 3.52 V/-1.01 V, increasing the current ON/OFF ratio to 5.51×104. Due to the increased oxygen content, the number of switching cycles further increases to 1614 while maintaining high data retention of 104 seconds, and successfully achieves multi-level state experiments.
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