本篇論文主要是對n通道汲極延伸型金氧半場效電晶體(DEMOSFET)之元件特性，做熱載子可靠度的研究，分析元件參數的退化情形，更進一步探討造成元件退化的機制。
首先，會對高壓元件的應用做基本的描述與介紹，然後介紹實驗中各個參數的量測方法與步驟，並會敘述進行熱載子stress實驗的方法及其用意。
我們對元件進行定電壓熱載子stress實驗之後，觀察各個參數的退化情況，其中臨限電壓(Threshold voltage)這個參數的退化,有異常增加的現象，藉由charge pumping的實驗與分析、以及TCAD的模擬結果，我們可以對此異常退化的現象做詳細的討論與解釋。
再來，我們改變元件通道的尺寸，使其變小，再進行熱載子stress的實驗與分析，探討改變通道長度對元件可靠度造成的影響，並使用charge pumping量測與TCAD模擬的方法加以佐証，對此結構的元件，完成可靠度的實驗與分析。

In this thesis, device characteristics of n-type DEMOS transistors are investigated on hot carrier reliability. The degradation phenomenon of device parameters are analyzed, furthermore, the mechanism which causes device degraded are discussed.
There will be some basic introductions of HV devices and its application. It also shows all the parameters extracted from my experiments and measurement methodology. Then, the hot carrier stress methodology will be introduced.
After hot carrier stress experiment, the degradation phenomena of each parameter are observed. The degradation of threshold voltage has anomalous increase after stress. By means of charge pumping analysis and TCAD simulation, the phenomenon of anomalous degradation can be discussed and explained in detail.
The dimension of channel length is reduced, and then the experiment of hot carrier stress and analysis of degradation phenomena are performed. The effects of channel length on device reliability are investigated. The experiment results can be evidenced by charge pumping analysis and TCAD simulation. The experiment and analysis on reliability with the device used in this study will be accomplished.

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