本論文中，利用奈米裂縫微影術製作一維奈米線元件已被論證。奈米裂縫微影術是藉由Bow-tie光阻浸泡至液態氮而受熱應力的作用產生裂縫的一種自組裝置方法。所製作奈米線可預期沿著Bow-tie腰身的位置，由於知道奈米線的位置，這使得隨後電極的連接變得非常容易。製作出的金屬奈米線有15μm長、次微米等級的寬度。
利用奈米裂縫微影術製做出的金屬奈米線可當作蝕刻阻擋層來製作矽奈米線場效應電晶體(SiNW FETs)、AlGaN/GaN高電子遷移率電晶體(HEMTs)和InGaN奈米線發光二極體(LEDs)。在這些製程中，有幾種關鍵的製程，例如矽化鎳和旋轉塗佈摻雜製程都包含了降低電極區的電阻率。製作出的矽奈米線場效應電晶體當基板作為背閘極時已表現出三端的電特性。而製作的AlGaN/GaN高電子遷移率電晶體也表現出良好的結構品質，在不久的將來，將進行電性測試。此外，InGaN奈米線發光二極體也可以被製作，藉由SEM的圖像判定InGaN奈米線發光二極體也表現出良好的結構品質。然而，難以製做在奈米線位置的p-ype電極連接限制了我們測量LED元件的電特性。
總之，奈米裂縫微影術發展製作出一維矽奈米線場效應電晶體(SiNW FETs)、AlGaN/GaN高電子遷移率電晶體(HEMTs)和InGaN奈米線發光二極體(LEDs)。製作出的奈米線元件皆表現出良好的結構品質，我們在製程中獲得合理且可重複的電特性。我們相信在未來這些元件有適當的電特性可應用在奈米光電或生物電性上。

In this dissertation, one-dimensional nanowire fabrication using Nano-crack lithography has been demonstrated. Nano-crack lithography is a self-assembly method which utilizes the thermal crack induced by immersing the bowtie-photoresist patterns into liquid nitrogen. The fabricated nanowire will be at a pre-determined location along the neck of the bowtie, which makes the subsequent electric connections very easy due to the known nanowire’s location. The fabricated metal nanowires are 15 microns long and exhibit sub-micron linewidth.
The metal nanowires fabricate d by Nano-Crack Lithography are used as etching hard mask to fabricate Silicon nanowire field-effect transistors (SiNW FETs), AlGaN/GaN high electron mobility transistors (HEMTs) , and InGaN nanowire light emitting diodes (LEDs). In the fabrication procedures, several key processes, such as NiSi and spin-on-dopant are also included to reduce the resistivity of the conducting electrodes. The fabricated SiNW FETs have demonstrated three-terminal electric characteristics when using the substrate as the back gate. The fabricated AlGaN/GaN HEMTs also demonstrate good structural qualities and will be electrically test in the near future. In addition, InGaN nanowire LEDs have also be fabricated, which also exhibit good structural quality judging by the SEM images. However, the difficult to fabricate the p-contact on the nanowire have limited our ability to measure the electric properties of the LED device.
In summary, Nano-Crack Lithography is developed to fabricate one-dimensional SiNW FETs, AlGaN/GaN nanowire HEMTs and InGaN nanowire LEDs. The fabricate nanowire devices all demonstrates good structural properties. We are in the process to obtain reasonable and repeatable electric characteristics. We believe these devices will be ready for electric measurement and suitable for future applications either in the fields of Nanophotonics or bionanoelectronics.

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