本研究以助熔長晶法，合成出兩種不同結構化合物。分別為化合物1、化合物2。
化合物1其晶系為Orthorhombic Pnma。此結構利用CuSe3、MSe4 (M = Cu、In)形成3D立體結構骨架，並且InSe4形成四面體以共用點串接沿b軸延伸和陽離子Ba2+填充在孔道中。化合物1因為部分原子位置有Cu和In的錯排(disorder)，造成解出分子式不平衡。因此，以佔有率及價數平衡原則解出分子式，並以分子式嘗試純相合成。
化合物2，其晶系為Monoclinic P21/m。此結構利用InTe3、MTe4、MTe5 (M = Ag或In)形成3D立體結構骨架。在孔洞中，MTe4 四面體以共用點沿b軸串接和陽離子Ba2+一起填充在孔道中。化合物2因為Ag、In無法藉由X-ray分辨電子密度。由B. V. S. (Bond valence sum)輔證，部分原子位置有Ag和In的混填，由程式指令精算有問題位置皆為發散。因此，以佔有率及價數平衡原則解出分子式，並以分子式嘗試更好單晶合成條件。

Two new compounds, 1 and 2, have been synthesized through solid state reactions with KBr flux.

Compound 1 crystallizes in the orthorhombic Pnma, which adopts a new three-dimensional framework structure. The framework in 1 is composed of two distinct infinite chain with Ba2+ cations distributed within the tunnels.The first chain is constructed by CuSe3 triangular plane and MSe4 (M = Cu, In) tetrahedral.The second chain is constructed by InSe4 tetrahedral.

Compound 2 crystallizes in the monoclinic P21/m, which possesses a new three-dimensional framework structure. The framework in 2 is composed of InTe3 triangular plane, MTe4 tetrahedral, and MTe5 (M = Ag or In) polyhedra with Ba2+ cations distributed within the tunnels.

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