在本論文中，我們的目標為製作氮化鎵系列紫外光帶通型光檢測器，其中可分為主要偵測UV-A波段之p-i-n型以及偵測UV-B波段之氮化鋁鎵/氮化鎵蕭基能障型光檢測器。在p-i-n型光檢測器中，我們分別製作出三種不同型態之帶通型光檢測器，分別為元件利用氧化銦錫電極、p型氮化鋁鎵光阻隔層以及使用覆晶封裝技術。首先，氧化銦錫電極部分，我們主要利用此材料雖然在UV-A波段有極佳之穿透率，但是在UV-B波段穿透率卻會嚴重衰減之特性。將此材料做為元件之電極，我們將可製作出只偵測UV-A波段之光檢測器。也由於它在UV-A波段有極佳之穿透率，元件將可達到光響應值0.13 A/W以及UV-A對UV-B阻隔比值(355 nm : 300 nm) 19.7。另外在利用p型氮化鋁鎵做為光阻隔層之元件，若使用300 nm 厚度之p型氮化鋁鎵，元件顯示出最佳帶通光響應圖，其UV-A對UV-B阻隔比值為25。除此之外，我們也針對此元件之抗靜電力特性以及施加高反向電流之退化程度來看元件之可靠度特性，其中元件使用300 nm 厚度之p型氮化鋁鎵將可承受反向8000 V之抗靜電力以及24小時連續反向施加0.4 mA於元件上。
在使用覆晶封裝技術來製作光檢測器方面，我們分別製作兩種不同結構：分別是使用氮化銦鎵光吸收層和n型氮化鋁鎵光阻隔層。其中元件利用氮化銦鎵做為光吸收層將可達到0.20 A/W光響應值、1.4×1013 cmHz0.5W-1檢測度和UV-A對UV-B阻隔比值(370 nm : 300 nm) 為519。另外一方面，我們也可以藉由調整n型光阻隔層之厚度以及使用不同之光吸收層(氮化鎵或氮化銦鎵)來改變光檢測器之頻寬。
至於在氮化鋁鎵/氮化鎵蕭基能障型光檢測器方面，我們首先針對元件結構最上層之低溫成長氮化鎵磊晶層厚度做最佳化探討，實驗顯示若使用15 nm之低溫成長氮化鎵磊晶層將可達到最佳之光響應值0.07 A/W和UV-A對可見光阻隔比值(320 nm : 420 nm) 700。除此之外，我們也可以藉由調整氧化銦錫蒸鍍條件和熱處理與否來調整光檢測器在UV-B波段之偵測頻寬。在-1 V之操作電壓上，使用未熱處理70 nm厚度之氧化銦錫做為氮化鋁鎵/氮化鎵蕭基能障型光檢測器之電極將可達到0.12 A/W 光響應值和 1.0×1012 cmHz0.5W-1之偵測度，這些數值都比傳統使用鎳金電極之氮化鋁鎵/氮化鎵蕭基能障型光檢測器來的高。

The main goal of this dissertation is the achievement of nitride-based UV band-pass photodetectors. The dissertation is divided into two parts, one is the study of nitride-based p-i-n UV-A band-pass photodetectors, and another one is the study of AlGaN/GaN Schottky-barrier UV-B band-pass photodetectors. In the study of p-i-n UV-A band-pass photodetectors, three types of band-pass photodetectors: photodetectors with ITO contacts, photodetectors with p-AlGaN blocking layers and flip-chip photodetectors were studied. Although ITO is transparent in visible and UV-A region, its transmittance decreases significantly in UV-B region. As a result, p-i-n band-pass photodetectors with ITO contacts can be realized. We can also achieve higher peak responsivity of 0.13 A/W and UV-A/UV-B (355 nm : 300 nm) rejection ratio of 19.7 with ITO contacts due to its higher transmittance. For photodetectors with p-AlGaN blocking layer, the devices with 300 nm-thick p-AlGaN blocking layer shows the best band-pass characteristics. The UV-A/UV-B rejection ratio was estimated to be 25. Furthermore, the ESD and high reverse current stressing on photodetectors with p-AlGaN blocking layer were also studied. The heterostructure photodetectors with 300-nm-thick p-AlGaN blocking layer can endure an extremely large -8000 V ESD surge and reverse 0.4 mA current stressing for 24 hours.
For flip-chip p-i-n UV-A band-pass photodetectors, two kinds of epitaxial structure, photodetectors with InGaN absorption layer and with n-AlGaN blocking layer were designed. By using flip-chip technology, we can realize much high responsivity of 0.20 A/W, high detectivity of 1.4×1013 cmHz0.5W-1, and high UV-A/UV-B (370 nm : 300 nm) rejection ratio of 519 for photodetectors with InGaN absorption layer. On other hand, by modulating the thickness of the blocking layer (n-AlGaN) and absorption layer (i-GaN or i-InGaN), it is possible to tune the optical bandwidth and central wavelength of the photodetectors’s UV responsivity.
On the part of AlGaN/GaN Schottky-barrier UV-B band-pass photodetectors, we fine tune the thickness of low-temperature-grown GaN cap layer (LT-GaN). With 15-nm-thick LT-GaN cap layer, the responsivity of 0.07 A/W and UV to visible rejection ratio (320 nm : 420 nm) of 700 can be achieved. Furthermore, we can realize UV-B band-pass photodetectors with different bandwidths by controlling ITO thickness and annealing conditions. With -1 V applied bias, we found that responsivity of 0.12 A/W and detectivity of 1.0×1012 cmHz0.5W-1 for nun-annealed 70-nm-thick ITO contact. The properties of these AlGaN/GaN Schottky-barrier photodetectors were superior to those of conventional Schottky-barrier photodetectors with Ni/Au contacts.

Chapter 1
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Chapter 3
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[21] S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu and C. T. Lee, "Nitride-based LEDs with 800oC-grown p-AlInGaN/GaN double cap layers", IEEE Photon. Technol. Lett., Vol. 16, No. 6, pp. 1447-1449, 2004.
[22] S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu and S. C. Chen, "Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode", IEEE Electron. Dev. Lett., Vol. 24, No. 3, pp. 129-131, 2003
[23] S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen and J. M. Tsai, "400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 4, pp. 744-748, 2002
Chapter 4
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[3] S. Nakamura and M. Senoh, ”Superbright green InGaN single-quantum-well-structure light-emitting diodes”, Jpn. J. Appl. Phys., Vol.34, L1332-L1335, 1995.
[4] O. M. Nayfeh, S. Rao, A. Smith, J. Therrien, and M. H. Nayfeh, “Thin Film Silicon Nanoparticle UV Photodetector”, IEEE Photonics Technol. Lett., Vol. 16, No. 8, pp. 1927-1929, 2004
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[8] M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, and J. M. Tsai, “GaN Schottky barrier photodetectors with a low-temperature GaN cap layer”, Appl. Phys. Lett., Vol. 82, pp. 2913-2915, 2003
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[12] G. Parish, S. Keller, P. Kozodoy, J. A. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars and U. K. Mishra, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN”, Appl. Phys. Lett., vol. 75, pp. 247-249, 1999.
[13] E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez and M.Razeghi, “High-quality visible-blind AlGaN p-i-n photodiodes”, Appl. Phys. Lett., vol. 74, pp. 1171-1173, 1999.
[14] Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. A. Khan, D. Kuksenkov and H. Temkin, “Schottky barrier detectors on GaN for visible-blind ultraviolet detection”, Appl. Phys. Lett., vol. 70, pp. 2277-2279, 1997.
[15] S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts", IEEE Electron. Dev. Lett., Vol. 24, No. 4, pp. 212-214, 2003.
[16] Z. M. Zhao, R. L. Jiang, P. Chen, D. J. Xi, Z. Y. Luo, R. Zhang, B. Shen, Z. Z. Chen and Y. D. Zheng, “Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111)”, Appl. Phys. Lett., vol. 77, pp. 444-446, 2000.
[17] Z. C. Huang, J. C. Chen and D. Wickenden, “Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors”, J. Cryst. Growth, vol. 170, pp. 362, 1997.
[18] Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu and C. S. Chang, “High detectivity InGaN-GaN multiquantum well p-n junction photodiodes”, IEEE J. Quan. Electron., Vol. 39, No. 5, pp. 681-685, 2003.
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Chapter 5
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Chapter 6
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Chapter 7
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