本研究中利用射頻磁控濺鍍系統在室溫環境下沉積單層IGZO與三層的IGZO/Ag/IGZO薄膜於玻璃基板上，藉由改變不同工作壓力、濺鍍時間、IGZO厚度、銀層厚度、退火溫度以及銀層圖案化，期望能獲得高透光率以及良好導電性質的透明導電薄膜，並以霍爾量測儀、X-ray繞射分析儀、UV-VIS可見光分析儀、掃描式電子顯微鏡以及高解析穿透式電子顯微鏡探討三層結構之光電特性、結晶狀態、界面接觸以及微結構。
　　在單一層IGZO薄膜實驗中獲得最佳參數為載子遷移率、電阻率、載子濃度分別為 9.43 cm2/V-S 、1.8x10-2 Ω-cm、5.32x1019 cm-3以及83.57%可見光(400-800 nm)平均透光率。在三層結構IGZO/Ag/IGZO中，電性會隨著銀層的厚度上升而大幅改善，電阻率分別為3.86 x 10-5Ω-cm、2.04 x 10-5Ω-cm、1.59x10-5Ω-cm，載子遷移率則為46.3 cm2/VS 49.7 cm2/V-S、61.5 cm2/V-S，但可見光之平均透光則由原本78.9%下降至34.28%，其中最佳參數電性同時具有3.86 x 10-5Ω-cm、46.3 cm2/V-S以及72.2%透光率，之後再經過400℃熱退火處理後可得到電阻率2.139x10-5Ω-cm在電性上有稍微改善，同時亦藉由TEM的觀測IGZO與Ag層之擴散的程度與微結晶狀況。又在XRD分析中，單層IGZO與三層IGZO/Ag/IGZO薄膜之結晶狀況顯示皆為非晶的結果。
　　最後，本研究應用在元件方面可藉由不同光電特性，可應產品需求製作出不同條件下的透明導電薄膜，例如:熱反射膜、電容式觸控面板、太陽能電池、防靜電玻璃、低輻射玻璃……等，根據Ag層與IGZO厚度的改變，可調整片電阻由104~10以內Ω/square.來因應產品需求。

This study addresses the single layer IGZOthin film and tri-layer of IGZO/Ag/IGZO thin film were deposited on glass substrates at room temperature by using radio frequency magnetron sputtering. And the transparent conductor oxide to exhibit low resistivity and high transparency in the visible light region (400-800nm). We expect to fabricate single layer IGZO and tri-layer of IGZO/Ag/IGZO thin film with better conducting properties and high transparent under different working pressure, deposition time, annealing temperatureand thicknesses of IGZO and sliver thin film. In order to achieve high transparency of IGZO/Ag/IGZO thin film, so we use the metal mask to pattern silver. The electrical, crystalline, optical, and micro-structure properties of single layer IGZO thin film and tri-layer of IGZO/Ag/IGZO thin film were measured with scanning electron microscope, Hall measurement, UV-Vis spectrophotometry, x-raydiffractometer and transmission electron microscope.

[01]F. Lemmi, W. Chung, S. Lin, P. M. Smith, T. Sasagawa, B. C. Drews,A. Hua, J. R. Sternand J. Y. Chen“Status of Si thin film transistors,”IEEE Electron Device Lett. 25 ,486(2004).

[02]陳逸民, "新興AMOLED 顯示面板搭配IGZO 背板技術與智慧型顯示裝置逐漸興起," 光連雙月刊, vol. 106, (2013).

[03] 楊明輝, "透明導電膜," 藝軒圖書出版社, pp. p34, (2006).

[04] H. Kawazoe, H. Yanagi, K. Ueda, and H. Hosono, MRS Bull.,Aug.,28,(2000)

[05]T. Minami, “Transparentconducting oxide semiconductors fortransparent electrodes,” Semicond. Sci. Technol., vol. 20, (2005).

[06]H. Hosono, “Ionic amorphous oxide semiconductors: Materialdesign,carrier transport, and device application,”Journal of Non-CrystallineSolids, vol. 352, p. 851, (2006).

[07]H.Q. Chiang, J. F. Wager, R.L. Hoffman, J. Jeong, and D. A. Keszler,97“High mobility transparent thin-film transistors with amorphous zinctin oxide channel layer,”Applied Physics Letters, vol.86,p.013503,(2005).

[08]E. L. Kim, S. K. Jung, C. S. Kim, D. K. Park, H. Y. Cho, and S. H. Lee,J.Korean Phys.Soc., vol. 51, p. 589, 2007. Physics Letters 325,pp.340-344,(2000).

[09] J. H. Shin and D. K. Choi, “Effect of Oxygen on the Optical and theElectrical Properties of Amorphous InGaZnO Thin Films Prepared byRF Magnetron Sputtering,”Journal of the Korean Physical Society,,vol. 53, p. 2019, (2008).

[10] S. Narushima, M. Orita, M. Hirano, and H. Hosono, “Electronicstructure and transport properties in the transparent amorphous oxide98semiconductor 2 CdO•GeO2,”Phys. Rev. B vol. 66, p. 035203, (2002).

[11]H. Hosono, M. Yasukawa, and H. Kawazoe, “Novel oxide amorphoussemiconductors: transparent conducting amorphous oxides,”Journal ofNon-Crystalline SoLids, vol. 203, pp. 334-344, 1996.

[12]T.O. Mason, R.P.H. Chang, T.J. Mark, and K.R. Poeppelmeier,“ImprovedTransparent Conducting Oxides for Photovoltaics”, Final ResearchReport,Northwestern University, Evanston, Illinois, (1may 1999-31Dec. 2002)

[13]Ben G. Streetman and Sanjay Banerjee,“Solid stateelectronicdevices”,Prentice Hall (2000)

[14]K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko“Comparison ofultraviolet photo-field effects between hydrogenated amorphous silicon and amorphousInGaZnO4 thin-film transistors,”Jpn. J. of Appl. Phys. 48, 010203 (2009).

[15]T.O. Mason, R.P.H. Chang, T.J. Mark, and K.R. Poeppelmeier,“ImprovedTransparent Conducting Oxides for Photovoltaics”, Final ResearchReport,Northwestern University, Evanston, Illinois, (1may 1999-31Dec. 2002)

[16]楊明輝，工業材料，179，134 (1999)

[17]陳建華，“P-型透明導電膜應用於有機發光二極體”，國立成功大學化學工程研究所碩士論文(2003)

[18]I. Hamberg, C. G. Granqvist, K. F. Berggren, a. B. E. Sernelius, and L.Engström, “Band-gap widening in heavily Sn-doped In2O3,”Phys.Rev.B, vol. 30, p. 3240, (1984).

[19]G. Leftheriotis , S. Papaefthimiou, and P. Yianoulis,“Development ofmultilayer transparent conductive coatings,” Solid State Ionics, vol.136-137, 2000.

[20] J. C. C. Fan, T. B. Reed, and J. B. Goodenough, “Heat mirrors forsolar-energy collection and radiation insulation,”In: IntersocietyEnergy Conversion Engineering Conference, 9th, (1974).
[21]P. H. Berning and A. F. Turner, “Induced transmission in absorbingfilms applied to band pass filter design,” J. Opt. Soc. Am, vol. 47,pp.230-239, (1957).

[22]K. Fukuda, S. H. N. Lim, and A. Anders, “Coalescence ofmagnetron-sputtered silver islands affected by transition metal seeding(Ni, Cr, Nb, Zr, Mo, W, Ta) and other parameters,”Thin Solid Films,vol. 516, pp. 4546-4552, (2008).

[23]Semiconductor Energy Laboratory“Sharp and Semiconductor Energy Laboratory Jointly Develop New Oxide Semiconductor Technology That Will Revolutionize Displays”June 1, (2012).

[24]H. Hosono, “Ionic amorphous oxide semiconductors: Materialdesign,carrier transport, and device application,”Journal ofNon-CrystallineSolids, vol. 352, p. 851, 2006.

[25]Dong-Hee Lee, Sung-Min Park, Dae-Kuk Kim, Yoo-Sung Lim, and Moonsuk Yi“Effects of Ga Composition Ratio and AnnealingTemperature on the Electrical Characteristics ofSolution-processed IGZO Thin-film Transistors” VOL.14, NO.2, APRIL, (2014).

[26]K.Nomura, A. T. Hiromichi Ohta, T. Kamiya, M. Hirano, and H.Hosono, “Room-temperature fabrication of transparent flexiblethin-film transistors using amorphous oxide semiconductors,”NATURE,vol. 432, pp. 488-492, (2004).

[27]D. Y. Cho, J. Song, K. D. Na, C. S. Hwang, J. H. Jeong, Y. G. Mo, et al.“Local structure and conduction mechanism in amorphousIn–Ga–Zn–O films,”Applied Physics Letters, vol. 94, p. 112112, (2009).

[28]楊錦章,“基礎濺鍍電漿,”電子發展月刊, vol. 68, pp. 13-40, (1983).

[29]B. Chapman, “Glow Discharge Processes,”John Wiley & Sons, NewYork, 1980.

[30]H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,“Amorphous99oxide channel TFTs,” Thin Solid Films, vol. 516, pp. 1516-1522, (2007).

[31]C. C. Lo and T.-E. Hsieh, “Preparation of IGZO sputtering target andits applications to thin-film transistor devices,”Ceramics International,vol. 38, pp. 3977-3983, (2012).

[32]E. Kusano, J. Kawaguchi, and K. Enjouji, “Thermal stability ofHeatreflectivefilms consisting of oxide–Ag–oxide deposited by dcmagnetron sputtering,” Journal of Vacuum Science & Technology A,vol. 4, p. 2907, 1986.

[33]蕭暐翰、邱俊毅、邱國展/工研院材化所“透明導電薄膜技術趨勢與應用(上)”(2014)

[34]J. Szczyrbowski, A. Dietrich, and K. Hartig, “Bendable silver-basedlow emissivity coating on glass,” Solar Energy Materials vol. 19, pp.43-53, (1989).