利用熱碳還原法在溫度550-750℃，以Ar為載流氣體生長Ge摻雜In2O3奈米線和In2Ge2O7奈米線並藉由調整Ge/In2O3粉末重量比例作為參數，調控生長Ge摻雜In2O3奈米線和In2Ge2O7奈米線。Ge/In2O3粉末重量比例範圍0.1-0.3％生長鍺摻雜氧化銦奈米線，0.4-10％鍺摻雜氧化銦奈米線和In2Ge2O7奈米線會混合生長，當Ge/In2O3粉末重量比例為10％只有In2Ge2O7奈米線生長。鍺摻雜氧化銦奈米線和In2Ge2O7奈米線生長機制皆遵循自我催化VLS機制。隨著氧化銦奈米線鍺含量增加，誘發PL光譜和光學能隙往高能量位移。此現象可以用壓縮應力在氧化奈米線所造成的影響和Burstein –Moss effect來解釋。

The tunable growth of Ge-doped In2O3 nanowires (NWs) and In2Ge2O7 (IGO) NWs was realized in flowing Ar at 550-750˚C by modulating the relative weight of Ge/In2O3 powders with the carbothermal reduction method. Ge-doped In2O3 NWs and a mixture of Ge-doped In2O3 and IGO NWs were grown with the weight ratio of Ge/In2O3 powders in the range of 0.1-0.3% and 0.4-10%, respectively, while with that above 10% only IGO NWs were observed. The growth of both Ge-doped In2O3 and IGO NWs followed the self-catalytic vapor-liquid-solid process. The Ge-doping induced a blueshift in the photoluminescence spectrum and optical bandgap of In2O3 NWs with the extent increasing with the Ge content In2O3 NWs. This result can be explained in terms of the compressive stress yielded in the Ge-doped In2O3 NWs and the Burstein –Moss effect.

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