本論文以射頻磁控濺鍍法成長氧化銦鎂及氧化鎂薄膜作為光薄膜電晶體與電阻式記憶體之主動層。氧化鎂為寬能隙，物理、化學穩定，高熱傳導性，高介電常數半導體材料，相容於CMOS製程，並可以摻雜於氧化銦調變其能隙寬度與載子濃度。
第一部份為氧化銦鎂光薄膜電晶體。以氧化銦與氧化鎂靶以共濺鍍方式製備氧化銦鎂薄膜於SiO2/p++-Si基板上。透過控制濺鍍功率調整元素比例，製備具紫外光感測功能之光電晶體。其臨界電壓，次臨界擺幅，開關電流比分別為 -0.88 V, 1.81 V/decade, 6 × 105。在紫外光感測應用上，最佳參數其光響應及可見光斥拒比為 0.17 A/W (280 nm) 與4 × 105。
第二部份為利用氧化鎂高介電常數特性應用於電阻式記憶體。利用濺鍍方式在氧化銦錫/玻璃基板上製作氧化鎂薄膜，並以不同厚度與製程氧通量調變其特性。以氧化鎂製作的電阻式記憶體可以正常開關1000次以上，並具有103的開關電流比(在0.1 V 讀取)。元件的記憶保持大於104秒。元件具有低切換電壓以及良好的切換電壓分佈，開啟電壓與關閉電壓分別為-0.37伏特與0.26伏特。在導通機制上，元件在低阻態(low resistance state，LRS)表現為歐姆傳導機制，高阻態(high resistance state，HRS)時則為蕭特基發射(Schottky emission)。

In this thesis, MgInO phototransistor and MgO resistive memory were fabricated by RF sputtering. MgO is a wide bandgap, physical and chemical stable, high thermal conductivity, high dielectric constant, and CMOS-compatible semiconductor. Moreover, MgO can be doped into In2O3 for engineering the bandgap and carrier concentration.
In the first part in this thesis, MgInO thin films were fabricated by co-sputtering MgO and In2O3 targets on SiO2/p++-Si substrate for application in UV phototransistors. The chemical composition can be tuning by controlling the sputtering input power. The device demonstrates threshold voltage, subthreshold swing and ON/OFF ratio of -0.88 V, 1.81 V/decade, 6 × 105, respectively. For UV sensing application, the device exhibits responsivity and UV-VIS rejection ratio of 0.17 A/W (280nm) and 4 × 105.
In the second parts, MgO resistive memory were fabricated due to the high dielectric constant. The MgO films were fabricated on ITO/glass substrate. The different thickness of active layer and the processing oxygen flow were applied to optimize the characteristics. The MgO resistive memory device can work properly for more than 1000 times with ON/OFF ratio 103 (read at 0.1V) and retention time is more than 104 seconds. The device shows low switching voltage and excellent SET/RESET voltage distribution. The SET and RESET voltage of -0.37 V and 0.26 V. The conduction mechanism of the device was ohmic conduction in low resistance state and Schottky emission in high resistance state.

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