本論文針對單鏡頭成像的無光罩曝光微影技術進行二項研究，首先是開發可應用於無光罩曝光的紫外光均光光源，研究內容包括：設計模擬、製作組裝、與實驗測試；另外，本論文嘗試利用稜鏡的折射，讓無光罩曝光機可以進行斜入射的光阻曝光，得到具有傾斜角的光阻微結構。
在均光光源的開發上，針對以數位微反射鏡裝置(Digital Micromirror Device, DMD) 為主的無光罩曝光機，本研究採用波長405 nm的紫外光發光二極體 (Ultraviolet Emitting Diode, UV-LED) 為光源，並以成像式的複眼均光系統為基礎，經由準直透鏡、透鏡陣列、與投射鏡片，最後完成一均光面積14x8 、光學均勻度90 %以上的紫光光均光光源，可以搭配DMD與成像鏡組完成無光罩曝光與微影製程。在斜入射的成像曝光方面，首先進行理論推導與模擬分析，最後進行實際的曝光測試；其架構是利用稜鏡將原本光線垂直入射的成像方式，改變成光線是由與光阻表面傾斜入射的方式成像，進而完成具傾斜角的光阻微結構；本文將討論此一構想的分析模擬與初步的實驗結果。

This thesis focuses on two research topics for the ultraviolet (UV) image exposure of photo-resist (PR) in maskless lithography. The first one is to develop and manufacture the homogenized UV light source for maskless lithography, which involves design, analysis, simulation, fabrication, assembly, and finally experiment and testing. The second one is to apply maskless UV exposure for oblique image exposure of PR such that PR microstructures with a slanted angle can be achieved.
For the maskless UV exposure based on Digital Micromirror Device (DMD), the high power ultraviolet emitting diodes (UV-LED) of 405 nm wavelength are chosen as the light source. The fly eyes’ homogenizing system is adopted and is consisting of collimating lens, microlens arrays, and projection lens. Finally, an uniformly distributed UV lighting area with an area size of 14x8 mm^2 and a homogeneity fo 90% was achieved, which can be directly applied to the DMD and image projection lens for maskless lithography.
As for the oblique imaging exposure of PR layers, a prism is inserted into the optical path of the maskless UV exposure system. Due to the refraction of light by the prism, the original image is now changed into a new image in which the UV light is incident on the image plane with an incident angle other than 90°. Therefore, PR microstructures with a slanted angle can be achieved. Theoretical analysis and simulation results will be addressed along with preliminary experimental results.

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