| 研究生: |
莊博凱 Chuang, Po-Kai |
|---|---|
| 論文名稱: |
使用步階式阻抗之小型化與低插入損失CMOS毫米波單頻與雙頻帶通濾波器 Research on Compact and Low-Insertion-Loss CMOS Millimeter-Wave Single- and Dual-Band Bandpass Filters Using Stepped-Impedance Resonators |
| 指導教授: |
莊惠如
Chuang, Huey-Ru |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 電腦與通信工程研究所 Institute of Computer & Communication Engineering |
| 論文出版年: | 2015 |
| 畢業學年度: | 103 |
| 語文別: | 中文 |
| 論文頁數: | 77 |
| 中文關鍵詞: | 毫米波 、小型化 、低插入損失 、步階式阻抗 、帶通濾波器 |
| 外文關鍵詞: | RF bandpass filter (BPF), CMOS, compact, dual-band, low-insertion-loss, millimeter-wave (MMW), stepped-impedance (SI) |
| 相關次數: | 點閱:157 下載:3 |
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本論文研製使用步階式阻抗之小型化、低插入損失CMOS毫米波60-GHz、77-GHz與60-/110-GHz、24-/77-GHz雙頻帶通濾波器,分別採用TSMC CMOS 0.18-μm與90-nm GUTM製程。60-GHz 步階式阻抗負載平行耦合線帶通濾波器,選用短路平行耦合線搭配兩段式步階阻抗開路截線作為負載以達到微小化。77-GHz反向平行耦合線帶通濾波器具有兩個可調式傳輸零點,使用兩段式步階阻抗開路耦合線及並聯兩段式步階阻抗開路截線之架構,可方便調控兩側傳輸零點位置,具有陡峭的選擇性。60-/110-GHz低插入損失之步階式阻抗雙頻帶通濾波器,共振器架構為並聯三段式步階阻抗截線,導納轉換器為三段式步階阻抗傳輸線等效而成。24-/77-GHz雙頻帶通濾波器使用π型阻抗/導納轉換器架構,共振器為串聯兩段式步階阻抗傳輸線。電路設計以Agilent ADS與Ansoft 3-D全波電磁模擬軟體HFSS以及Zeland-IE3D進行模擬,量測部分則是採用on-wafer方式進行,模擬與量測皆具有良好的一致性。
This thesis presents the research on compact and low-insertion-loss CMOS millimeter-wave (MMW) single-band (60 and 77 GHz ) and dual-band (60/110 and 24/77 GHz) bandpass filters (BPFs) using stepped-impedance (SI) resonators, implemented by standard TSMC 0.18-μm or 90-nm GUTM CMOS process. The 60-GHz BPF, consists of the short-ended coupled line and two-section SI open-circuited stub, achieves a significant size reduction. The 77-GHz BPF with the two-section SI open-ended coupled line and two-section SI open-circuited stubs has two transmission zeros for sharp band edges. For dual-band BPFs, the 60-/110-GHz BPF which consists of resonators, tri-section SI stubs, and admittance inverters provides enough design parameters to synthesize the dual-band BPF. In 24-/77-GHz BPF design, the resonators are two-section SI transmission lines, and the π-type structures are used to realize the K/J inverters. The designed MMW CMOS filters are all performed by using the on-wafer measurement. Simulation and measurement results are compared and discussed.
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