本論文以射頻磁控濺鍍系統沉積氧化銪（Eu2O3）材料於三氧化二鋁（sapphire）基板上，形成氧化銪薄膜，並在氮氣環境下進行不同溫度熱處理，探討熱處理溫度對氧化銪薄膜光特性之影響。另外，改變濺鍍製程壓力，探討濺鍍製程壓力對氧化銪薄膜光特性之影響。
由實驗結果顯示，使用射頻磁控濺鍍沉積氧化銪薄膜之沉積速率非常緩慢，在濺鍍功率100W情況下，平均鍍率為20 A/min。使用325nm氦-鎘雷射激發氧化銪薄膜須經1200℃熱處理才有較佳紅光發光強度，其中以10m torr製程壓力所沉積之薄膜發光強度最強，所得放射光譜有595nm(5D0→7F1)、616nm與624nm(5D0→7F2)。利用螢光分光光譜儀分析螢光薄膜激發與放射光譜，得知氧化銪螢光薄膜並沒有產生f-f內層電子軌域躍遷，而325nm以上之波長皆無法激發螢光薄膜產生紅光放射。

In this study, Eu2O3 thin films were deposited on sapphire substrates by RF-magnetron sputtering system and annealed under nitrogen atmosphere at different temperatures to change their optical properties. We also studied the effects of different chamber pressures during deposition on optical properties of the Eu2O3 films.
Experimental results indicated that the deposition rate of Eu2O3 thin films using RF-magnetron sputtering system under 100 watt was very slow with average deposition rate of around 20 A/min. Under excitation (325nm He-Cd laser), red light emission could be observed from the Eu2O3 thin films with thermal annealing temperature at 1200°C, especially for the 10m torr-deposited films. The red emission band included three peaks, that is 595nm (5D0→7F1), 616nm and 624nm (5D0→7F2). According to the analysis of fluorescence spectrophotometer, one can not observe any emission or absorption peaks from f-f transition states. In addition, no red light emission was detected by exciting sources with wavelengths longer than 325nm.

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