本文主要目的在於探討紅外光面射型雷射之元件製程技術及特性改良之相關研究，其中又分為共振腔發光二極體和面射型雷射。本文所使用的方法為利用選擇性氧化技術定義雷射增益區，達到電流侷限及光場侷限的效果，以獲得較高輸出功率。本文之紅外光面射型雷射其活性層材料主要為未摻雜之砷化銦鎵量子井，並在共振腔鄰近的區域成長具有高鋁含量之砷化鋁鎵層，在製程中利用感應耦合電漿蝕刻技術將高鋁含量之砷化鋁鎵層暴露出來，並置於高溫水氣中進行選擇性氧化製程，以形成絕緣之氧化鋁電流侷限層，同時可提供光場侷限效果。活性層兩側為交錯排列之砷化鎵/砷化鋁鎵半導體層，作為分佈布拉格反射器，每一層厚度均需精確控制在發光波長的四分之一，以期能獲得較高之反射率。為有效降低所製作之面射型雷射元件串聯電阻，因此所採用之砷化鎵基板為N型摻雜，同時底部及頂部之分佈布拉格反射器分別為N型及P型摻雜，以便於製作金屬電極。
利用該製程方法所製作的共振腔發光二極體，可以消除金屬遮蔽的效應，且在連續波300 mA電流驅動的條件下，其輸出功率已從1.8 mW增加至2.6 mW(氧化後)。就850 nm面射型雷射來說，氧化孔徑較大的元件(20 m)的情況下，其輸出功率可達到10 mW 以上且有較佳的熱消散能力。在室溫脈衝操作條件下，920 nm面射型雷射最大輸出功率24 mW，且電阻為20歐姆，室溫下臨界電流為33 mA，特性溫度129 K，波長對溫度變化率為0.06508 nm/oC。室溫下連續波操作只能獲得共振腔發光二極體的特性，但是半高寬已經可以達到1.98 nm。

The main goal of this thesis is to investigate the processing technology and characteristics improvement of infrared vertical cavity surface light emitting devices, including resonant cavity light emitting diodes (RCLEDS) and vertical cavity surface emitting lasers (VCSELs). In this thesis, we will use the GaAs-based material system to develop the vertical cavity surface light emitting devices, including device fabrication technology and characteristic improvement. Using the selective oxide confined technology to define the laser gain region and obtain current and optical confinement, we can acquire higher output power. Currently the designed infrared VCSEL consists of undoped InGaAs quantum wells as the active layer, and include a high Al composition AlGaAs layer adjacent to the active region. In the process procedure the high Al composition AlGaAs layer needs to be exposed by using inductively coupled plasma (ICP) etching. And then being placed in high temperature steam environment to carry out the selective oxidation process, to form the insulating Alumina current confinement aperture, and provide optical confinement at the same time. The active layer will be sandwiched by two distributed Bragg reflectors (DBRs), which consist of interlaced GaAs/AlGaAs semiconductor layers, which act as the. The thickness of each layer must be precisely controlled as a quarter wavelength in order to obtain higher reflectivity and stop bandwidth. For the purpose of reducing series resistance of the fabricated VCSEL devices, we will adopt N+ GaAs substrate, and the bottom and top DBR will be n- and p-doped, respectively, so as to make metal contact more easier.
The OC-RCLEDs have been proven to be superior to conventional RCLEDs. The comparison of L-I characteristics of RCLEDs and OC-RCLEDs indicates that the output power at 300 mA can be greatly improved from 1.8 to 2.6 mW by simply oxidizing the oxide layer. For 850 nm VCSELs, the larger aperture diameter (20m) has not only higher light output power (10.4mW at 30mA) but also better thermal dissipation. The high power (24 mW) 920 nm oxide-confined VCSEL under pulse mode operation is fabricated successfully, and the optical and electrical characteristics are measured. The series resistance is 20 , threshold current is 33 mA, characteristic temperature (To) is 129 K and the wavelength shift rate with various temperature is 0.06508 nm/oC. Under continuous wave (CW) operation, the device works as RCLED and the FWHM of EL spectrum is as narrow as 1.98 nm.

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