在本論文中，我們以有機金屬化學氣相沉積法成長及研製砷化鋁鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率電晶體。由於物理真空鍍膜技術對元件造成的熱傷害，使得費米能階幾乎釘在某一定值，而不隨著不同金屬功函數變動，同時造成蕭特基能障高度也相對較低。
為了改善費米能階釘住效應對元件的影響，我們於本論文中使用無電鍍法沉積金屬閘極，以獲得良好的蕭特基接面。因為蕭特基接面的品質對元件特性之影響相當直接，蕭特基能障高度的增加，會使得空乏區增大，並提高夾止特性及崩潰電壓值。
此外，我們比較無電鍍與傳統熱蒸鍍之元件特性，包含直流、微波和可靠度表現。在室溫下，無電鍍元件展現良好的直流特性，但隨著溫度由300K升至500K時，其退化率相對嚴重，因此熱蒸鍍元件在微波與可靠度的表現上，仍然是比較佔有優勢。

In this thesis, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) grown by metal organic chemical vapor deposition (MOCVD) have been fabricated and investigated. Due to the thermal damage of physical vacuum depositions, Fermi-level is almost pinned at constant value instead of different metal work function. This results in a lower Schottky barrier height of the studied devices.
In order to eliminate Fermi-level pinning effect, electroless plated technology is employed to deposit metal gate to obtain well-behaved Schottky contact interface. Since the quality of Schottky contact interface directly affects the device performance, the increase of Schottky barrier height can enhance the channel’s depletion region as well as the pinch-off and breakdown characteristics.
Furthermore, the characteristics of the devices with electroless plating and conventional thermal evaporation, including DC performance, microwave performance, and reliability issues are systematical compared. At room temperature, the device with electroless plating shows better DC performance but worse temperature degradation rate with temperature increasing from 300K to 500K. In addition, the device with thermal evaporation still exhibits superior microwave and reliability performance.

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