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研究生：	王志欽 Wang, Chih-Chin
論文名稱：	一維奈米碳材結構分析與模擬之研究 Structure Analysis and Simulation of One-dimensional Carbon Nano-materials
指導教授：	劉全璞 Liu, Chun-Pu
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學及工程學系 Department of Materials Science and Engineering
論文出版年：	2003
畢業學年度：	91
語文別：	中文
論文頁數：	164
中文關鍵詞：	奈米碳管、催化劑、奈米顆粒、薄膜
外文關鍵詞：	simulation, TEM, CNT
相關次數：	點閱：75 下載：10
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本研究乃是以國科會子計畫-奈米碳管成長之新穎分析為主題。研究內容可分為薄膜及奈米顆粒的成長與分析、奈米碳管的成長與分析、奈米碳管之穿透式電子顯微鏡影像與繞射圖模擬等三部分。
前兩部分的研究方式乃以穿透式電子顯微鏡(TEM)、掃瞄式電子顯微鏡(SEM)、原子力顯微鏡(AFM)及其它分析工具，探討(1)以Si及Al2O3為基板、Co為靶材，用直流式磁控濺鍍系統(DC sputter)、分子束磊晶系統(MBE) 、超高真空離子束濺鍍系統(UHV IBS)成長出之Co薄膜及奈米顆粒的結構與型態。(2)以Co為催化劑，用微波電漿輔助化學氣相沈積系統(MPCVD)成長出之奈米碳管的結構與型態。第三部分則是在Unix系統下使用EMS、Semper等程式語言進行奈米碳管之TEM影像與繞射圖模擬。
研究成果顯示：(一)在Co薄膜及奈米顆粒成長方面：(1)發現超高真空離子束濺鍍法成長的Co薄膜較直流式磁控濺鍍法成長的Co薄膜有較佳之電性。(3)超高真空離子束濺鍍法產生的Co薄膜有很強的優選方向。(4)超高真空離子束濺鍍系統控制製程可生長出單晶的CoSi2奈米線。(二)以Co為催化劑成長一維奈米碳材方面：(1)發現催化劑結晶性、催化劑結構、催化劑形狀、基板材質與方向性、薄膜厚度、氫氣蝕刻條件等參數都會影響奈米碳管之成長。(2)以FCC結構之Co膜為催化劑較HCP結構之Co膜為催化劑容易成長中空的奈米碳管。(3)以Al2O3(0001)為基板成長之Co膜較Al2O3(11-20)為基板成長之Co膜容易長出奈米碳管。(4)只有在適當的膜厚時才能長出奈米碳管。(5)不經H2 etching, 直接用MPCVD也能長出品質良好的奈米碳管。且通常經過H2 etching之Co膜，需在島狀區域或團簇區域才能產生奈米碳管；然而沒有經過H2 etching之Co膜，在團簇區域及基板上任何位置均可產生奈米碳管。 (三)在一維奈米碳材之電腦模擬方面：目前已完成了各種單層奈米碳管及數種多層奈米碳管之TEM影像與繞射圖模擬。

Structure Analysis and Simulation of One-dimensional Carbon Nano-materials

第一章 緒論………………………………………………………………….......1
1-1	前言…………………………………………………………………......1
1-2	研究動機與目的…………………………………………………..…… 10
第二章 文獻回顧與理論基礎……………………………………………………..11
2-1	奈米碳管之結構與特性………………………………………………...11
2-1-1單層奈米碳管之結構與電性…………………….……………...........11
2-1-2多層奈米碳管之結構與電性………….………………………...........12
2-1-3場發射特性………………………………………………….…...........13
2-1-4機械性質………………………………………………………............14
2-1-5熱性質……………………………………………………….…...........15
2-2奈米碳管之成長機制……..……………………………………………......25
2-3奈米碳管之合成方法………………………………………...………….....29
2-3-1非催化劑型奈米碳管之合成方法….…………………………...........29
       2-3-1.1雷射剝蝕法……………..………………………………….....29
2-3-1.2高溫裂解法.……………………………………………….............29
2-3-1.3電化學法……………………………………………………............30
2-3-2催化劑型奈米碳管之合成方法….……………………………...........30
2-3-2-1催化劑之成長…...………….….……………….……….….........30
2-3-2-1.1直流式磁控濺鍍法...……………..………………….............30
2-3-2-1.2超高真空離子束濺鍍法…..…………………………..............36
2-3-2-1.3分子束磊晶法…………………………..……………..............37
2-3-2-2奈米碳管之合成……………………………………………............38
         2-3-2-2.1電弧放電法…………………………..…………….......38
2-3-2-2.2化學氣相沉積法………………….…………………….............38
2-3-2-2.3電漿輔助化學氣相沉積法………….…………...................40
2-4奈米碳線………………………………………………………......…..……53
第三章 實驗方法與步驟………………………………………………………....54
3-1 實驗流程……………………………………………………………...…....54
3-1-1 鈷薄膜及奈米顆粒之結構與性質探討…………………….............54
3-1-2以鈷為催化劑成長奈米碳管之結構與性質探討…………..............55
3-2 實驗材料與前處理…………………………………….………....…......58
3-2-1製備催化劑之材料與前處理………………………………..............58
3-2-2 製備奈米碳管之材料…………………………...…...……...........61
3-3 實驗設備……………………………………………………………...…....61
3-3-1製備催化劑(鈷薄膜與奈米顆粒)之成長系統…………..……..........61
3-3-2製備一維奈米碳材之成長系統…………………………...…...........67
3-4 試片分析之準備……………………………...…………………….….....69
3-4-1  一般試片之準備…………………………………...……...…........69
3-4-2  TEM試片之準備…………………………………………...............69
3-5 分析設備……………………………………………………………..….....70
3-4-1 薄膜厚度分析--橢圓儀……………………….………….…...........70
3-4-2 薄膜電性分析--四點探針儀……………………………...…..........71
3-4-3 原子力顯微鏡(AFM)－薄膜表面型態與粗糙度分析……..............72
3-4-4 掃瞄式電子顯微鏡(SEM)－薄膜表面型態分析…………..............73
3-4-5 穿透式電子顯微鏡(TEM)－薄膜微結構分析……….….............…74
3-4-6 拉曼光譜儀(Raman spectroscopy)－化學鍵結分析………...........76
第四章 結果與討論………………………………………………………....78
4-1 一維奈米碳材之成長……………………………………..…….…..…....83
4-1-1催化劑結晶性、結構型態對奈米碳材成長之影響……………..........83
4-1-1.1直流式磁控濺鍍法成長Co薄膜及奈米顆粒(DCS-Co)…..............83
4-1-1.2 DCS-Co為催化劑成長一維奈米碳材……….……...……...........83
4-1-2 催化劑基板材質與方向性對奈米碳材成長之影響…………...........89
4-1-2.1 分子束磊晶法成長Co薄膜(MBE-Co)…………………...............89
4-1-2.2  MBE-Co為催化劑成長一維奈米碳材………..……...…...........89
4-1-3 催化劑膜厚、氫氣蝕刻條件對奈米碳材成長之影響………...........90
4-1-3.1 超高真空離子束濺鍍法成長Co薄膜及奈米顆粒(IBS-Co)
……………………………………………………………………….............90 
4-1-3.2 IBS-Co為催化劑成長一維奈米碳材……….………..…............94
4-2 一維奈米碳材之TEM影像與繞射圖模擬.………………………........…137
第五章 結論…………………………………………………….……………..…152
參考文獻…………………………………………………………….…….…....155
                                    

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