目前的照明設備，多數會產生熱及污染等的問題，因此開發具無
水銀污染、發光效率高等優點之半導體發光二極體為必然趨勢。本研
究構想製作混合量子點型的發光二極體，利用量子點本身高效能的發
光，期待可藉由量子侷限效應在可見光譜的發光波長內調控發光顏
色。本研究第一部分以熱蒸鍍法製備硫化鎘發光二極體，並探討鍍膜
速率，蒸鍍製程，銅熱擴散條件，鍍上鋁電極後分析硫化鎘二極體電
性。比較快速熱退火儀(Rapid thermal annealing , RTA)與傳統高溫爐兩製程的樣品，RTA 能有效控制銅熱擴散時間，使元件電阻變小，注入電流變大，且製成的元件二極體特性較明顯。在RTA 200℃進行15min 的條件下，表面的平整度較佳，對於第二層的硫化鎘蒸鍍接合處缺陷較有改善。共蒸法的製程中，由於銅原子分散在硫化鎘中，在100℃下只需少許時間就可激發銅的活性，理想二極體電性也有呈現，但兩者製程元件的發光測試中，只在電極接觸點有發現閃爍光點產生，應是電流過大，造成電極燒毀。從實驗結果可看出元件中還存在許多非輻射複合中心，造成非輻射機率大增，導致元件無法發光。第二部分利用加入溶劑二段去離子水(DI water)不同的反應時間
控制前驅物反應溶液中的鎘離子濃度，再進行微波加熱合成碲化鎘的
量子點，成功控制量子點所放射的螢光波長，範圍由綠光至黃橘光。

Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is aimed at manufacturing hybrid QDs LED, making to use of the high performance luminescence and the quantum confinement effect to control the luminescence color of QD.
In this study, thermal evaporation method is used to prepare CdS Light-emitting diodes (LEDs), and CdS films prepared with different evaporation rate, manufacturing process, thermal diffusion condition of copper for p-type CdS, then analyzes electric characteristic after aluminum evaporated. Rapid thermal annealing (RTA) is more efficacious to control heating time comparing to traditional thermal furnace lead to reducing device’s resistance and increasing injecting electric current and better characteristic of diodes. The surface of Cu and CdS films annealed using RTA under 200℃ for 15 minutes is much smoother, and the film has less defects at the junction of Cu/CdS and CdS film. In co-evporation process, copper atoms disperse well in CdS film, and copper can be brought to be active dopant by using RTA under 100℃ for 5min to show the characteristic of diodes. However, there detect no light emitting for devices prepared by both thermal evaporation and co-evaporation processes, except some sparks observed on the electrode contact. It is possibly that excessive inject current leads to aluminum electrode burning out. Experimental results suggest that the device has a lot of non-radiation recombination centers to decrease the radiation probability and lead to no light emitting.
The second part design the synthesis of CdTe quantum dots assisted with microwave heating. By controlling the different reaction time after adding solvent (DI water) to adjust Cadmium ion concentration, and using microwave heating , CdTe quantum dots with fluorescence from green to orange were successfully produced.

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